Abstract:In this manuscript, carrier transport simulation methods are proposed for devices with the coexistence of quantum transport and diffusive transport by combining the nonequilibrium Green's function method with the drift-diffusion transport simulation method. Current continuity between quantum transport and drift-diffusion transport is ensured by setting quantum transport current as the connection boundary condition of drift-diffusion simulation or by introducing quantum transport-induced carrier generation rates to drift-diffusion simulation. A comprehensive study of our method and the method combining the Wentzel–Kramers–Brillouin (WKB) method with the drift-diffusion transport simulation method is performed for n-type tunnel oxide passivating contact solar cell to investigate their applicable conditions and balance the accuracy and computational cost. As the oxide barrier width, barrier height, and electron effective mass increase, or the doping concentration in the electron transport layer decreases to the extent that the blocking effect of the oxide barrier on light-generated electrons becomes significant, method I is more accurate since the transmission coefficient near the conduction band edge calculated by WKB is overestimated; otherwise, method II is more suitable due to its low computational cost without the loss of accuracy. In addition, the differences between current densities, carrier densities, and Shockley–Read–Hall recombination rates simulated under the two current continuity conditions for the solar cell with different carrier mobilities are also further explored and analyzed.

Transient and Stationary Simulations for A Quantum Hydrodynamic Model

Stationary and Transient Simulations for A One-Dimensional Resonant Tunneling Diode

Semiconductor full quantum hydrodynamic model with non-flat doping profile: (i) stability of steady state

A finite element method for the quantum hydrodynamic model for semiconductor devices

Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

Semiconductor Full Quantum Hydrodynamic Model with Non-Flat Doping Profile: (II) Semi-Classical Limit

Asymptotic Stability and Semi-Classical Limit for Bipolar Quantum Hydrodynamic Model

Open System Approach to Non-Equilibrium Dynamical Theory of Quantum Dot Systems

Steady-State Solutions and Asymptotic Limits on the Multi-Dimensional Semiconductor Quantum Hydrodynamic Model

Stability and semi-classical limit in a semiconductor full quantum hydrodynamic model with non-flat doping profile

Steady Hydrodynamic Model of Semiconductors with Sonic Boundary and Transonic Doping Profile

Simulating Semiconductor Charge Transport

Stability of the Stationary Solution of the Cauchy Problem to A Semiconductor Full Hydrodynamic Model with Recombination-Generation Rate

Numerical approximation of the viscous quantum hydrodynamic model for semiconductors

Structural stability of subsonic steady states to the hydrodynamic model for semiconductors with sonic boundary

Structural stability of interior subsonic steady-states to hydrodynamic model for semiconductors with sonic boundary

COMPUTATIONAL INVESTIGATION OF NANOSCALE SEMICONDUCTOR DEVICES AND OPTOELECTRONIC DEVICES FROM THE ELECTROMAGNETICS AND QUANTUM PERSPECTIVES BY THE FINITE DIFFERENCE TIME DOMAIN METHOD (INVITED REVIEW)

A Relaxation Scheme for the Hydrodynamic Equations for Semiconductors

Stationary solutions to a hybrid viscous hydrodynamic model with classical boundaries

Probing spin hydrodynamics on a superconducting quantum simulator

TRANSONIC STEADY-STATES OF EULER-POISSON EQUATIONS FOR SEMICONDUCTOR MODELS WITH SONIC BOUNDARY