Abstract:In this paper, we study the one-dimensional Euler–Poisson equations of bipolar hydrodynamic model for semiconductor device with time-dependent damping effect −J(1+t)λ for −1<λ<1, where the damping effect is time-gradually-degenerate for λ>0, and time-gradually-enhancing for λ<0. Such a damping effect makes the hydrodynamic system possess the nonlinear diffusion phenomena time-asymptotic-weakly or strongly. Based on technical observation, and by using the time-weighted energy method, where the weights are artfully chosen, we prove that the system admits a unique global smooth solution, which time-asymptotically converges to the corresponding diffusion wave, when the initial perturbation around the diffusion wave is small enough. The convergence rates are specified in the algebraic forms O(t−34(1+λ)) and O(t−(1−λ)) according to different values of λ in (−1,17) and (17,1), respectively, where λ=17 is the critical point, and the convergence rate at the critical point is O(t−67ln⁡t). All these convergence rates obtained in different cases are optimal in the sense when the initial perturbations are L2-integrable. Particularly, when λ=17, the convergence rate is the fastest, namely, the asymptotic profile of the original system at the critical point is the best.

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