Abstract:This paper is concerned with the Cauchy problem to Euler-Poisson equations for 1-D unipolar hydrodynamic model of semiconductors with time-dependent damping effect -nu/(1+t)(lambda), for lambda is an element of (-1,0)boolean OR(0,1), where the damping is strong for lambda < 0 and weak for lambda > 0. For the strong damping case with lambda is an element of (-1,0), the system is proved to possess a unique global smooth solution time-asymptotically converging to the steady-state in the sub-exponential form O((1+t)(vertical bar lambda vertical bar)e(-)(alpha(1+t)1-)(vertical bar lambda vertical bar)) for some constant alpha > 0. For the weak damping case with lambda is an element of (0,1), when the doping profile is completely flat, the system is further proved to admit a unique global smooth solution converging to the constant steady-state in the sub-exponential form O((1+t)(-vertical bar theta+lambda vertical bar)(/2) e(-beta(1+t)1-vertical bar lambda vertical bar)) for some number beta > 0. Specially, the index theta is an element of [lambda,infinity) relies on the initial perturbation and could be large enough once the initial perturbation is sufficiently close to zero, such that the convergence rate involving the part of algebraic decay can be arbitrarily large. A new observation is that the time-dependent damping essentially affects the asymptotic behavior of solutions to Euler-Poisson system, and both the weak and strong damping effects cause the decay rates to be sub-exponential, which are slower than the regular exponential decay in the case of lambda = 0. The adopted approach for the proof in this paper is based on the elementary L-2-energy estimates but with some technical development.

GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL

Global Solution to the Drift-Diffusion-poisson System for Semiconductors with Nonlinear Recombination-Generation Rate

Asymptotic Discussion of the Solutions to the Initial Boundary Value Problem for Semiconductors Drift Diffusion Equations

Stability of the Stationary Solution of the Cauchy Problem to A Semiconductor Full Hydrodynamic Model with Recombination-Generation Rate

The Well-Posedness of Bipolar Semiconductor Hydrodynamic Model with Recombination-Generation Rate on the Bounded Interval

Large time behavior of entropy solutions to one-dimensional unipolar hydrodynamic model for semiconductor devices

The Existence and Long-Time Behavior of Weak Solution to Bipolar Quantum Drift-Diffusion Model*

Asymptotic Behavior Of Solutions For Systems Of Periodic Reaction-Diffusion Equations In Unbounded Domains

The Relaxation of the Hydrodynamic Model for Semiconductors to the Drift–Diffusion Equations

Semiconductor full quantum hydrodynamic model with non-flat doping profile: (i) stability of steady state

Global Existence and Asymptotic Limits of Weak Solutions of the Bipolar Hydrodynamic Model for Semiconductors

Asymptotic Behavior of Solutions to Bipolar Euler–Poisson Equations with Time-Dependent Damping

Steady-State Solutions and Asymptotic Limits on the Multi-Dimensional Semiconductor Quantum Hydrodynamic Model

The uniqueness of steady sonic-subsonic solution to hydrodynamic model for semiconductors

Relaxation Limit in Bipolar Semiconductor Hydrodynamic Model with Non-Constant Doping Profile

On a drift-diffusion system for semiconductor devices

Analytic Solutions of Drift-Diffusion Equations and Mobility of Organic Semiconductors

Semiclassical and Relaxation Limits of Bipolar Quantum Hydrodynamic Model for Semiconductors

THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS

Sub-exponential Convergence to Steady-States for 1-D Euler–Poisson Equations with Time-Dependent Damping

Asymptotic limits of solutions to the initial boundary value problem for the relativistic Euler–Poisson equations