On a drift-diffusion system for semiconductor devices

Rafael Granero-Belinchón
DOI: https://doi.org/10.1007/s00023-016-0493-6
2016-03-12
Abstract:In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the asymptotic expansion as $t\rightarrow\infty$.
Analysis of PDEs
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