Abstract:Since the introduction of fast integrated circuits, semiconductor manufacturers have concentrated their efforts on reducing the size of transistors. Increased working frequencies (shorter transistors) and decreased power consumption are the goals of circuit designers working on large-scale production costs (with the lowering of supply voltage). Short channel effects (SCEs) are a side effect of transistor shrinkage. While reducing gate oxide thickness in downscaled devices, gate stack engineering is an approach that directs to an increase in leakage current (quantum tunnelling effect). SiO 2 's application as gate insulation is anticipated to result in a gradual increase in tunnelling leakage current. As a result, the market has witnessed an increase in innovative device architectures as Fin field effect transistors (FinFET). Nanosheets is a cutting-edge method that overcomes FinFET's constraints. In this study, sub-nm junction-less Gate Stack Silicon-on-Insulator (SOI) nanosheet FinFETs (NS FinFET) for both low and high levels of doping are examined. From doping concentration (ND) range of 10 16 cm-3 to 10 19 cm-3, the comprehensive DC performance evaluation is examined, including transfer characteristics, output characteristics, subthreshold swing (SS), drain induced barrier lowering (DIBL), and ION/IOFF ratio. The proposed Junction less FinFET produces better switching characteristics with IOFF getting less than nA for all the doping ranges. Furthermore, dynamic power and power consumption of the proposed JLFET is investigated. It shows paradigm shift for the semiconductor industries for low-power and high-performance applications at sub-nm region.

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Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

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High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Vertical Sandwich Gate-All-Around Field-Effect Transistors with Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Vertical Sandwich GAA FETs with Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

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Vertical N-Type and P-Type Nanosheet FETs with C-Shaped Channel

First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates

A High Performance 4H-Sic Normally-off VJFET

Vertical Low-Voltage Oxide Transistors Gated by Microporous SiO2/LiCl Composite Solid Electrolyte with Enhanced Electric-Double-layer Capacitance

Design Consideration and Fabrication of 1.2-Kv 4H-Sic Trenched-And-Implanted Vertical Junction Field-Effect Transistors

Junctionless Ferroelectric Field Effect Transistors Based on Ultrathin Silicon Nanomembranes

A Viable Self-aligned Bottom-Gate MOSFET Technology for High Density and Low Voltage SRAM

Large-scale sub-5-nm vertical transistors by van der Waals integration

A novel asymmetric graded low doped drain (AGLDD) vertical channel nMOSFET with sidewall masked (SWAM) LOCOS isolation

Fabrication Of 32 Nm Vertical Nmosfets With Asymmetric Graded Lightly Doped Drain Structure

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)