0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode <formula formulatype="inline"><tex Notation="TeX"> $\hbox{In}_{0.75}\hbox{Ga}_{0.25}\hbox{As}$</tex></formula> MOSFET
Y. Q. Wu,W. K. Wang,O. Koybasi,dmitri n zakharov,eric a stach,S. Nakahara,J. C. M. Hwang,peide d ye
DOI: https://doi.org/10.1109/LED.2009.2022346
IF: 4.8157
2009-01-01
IEEE Electron Device Letters
Abstract:We report the experimental demonstration of deep-submicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 mu A/mu m and transconductances of 538-705 mu S/mu m. The 100-nm device has a drain current of 801 mu A/mu m and a transconductance of 940 mu S/mu m. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.