High Aspect Ratio (~25:1) Sub-10 Nm HSQ Lines Using Electron Beam Lithography

Muhammad Mirza,Haiping Zhou,Kevin E. Docherty,S. Thoms,D.S. Macintyre,Douglas J. Paul

2012-01-01

Abstract:This paper reports the challenging work in producing ultra high aspect ratio ~25:1 sub-10 nm HSQ lines using 250 nm thick HSQ resist, which is successfully used as the etch mask and provides the flexibility for high resolution pattern transfer.

What problem does this paper attempt to address?

Aged Hydrogen Silsesquioxane for Sub-10 Nm Line Patterns

Xi Chen,Tao Zhang,Vassilios Constantoudis,Shi-Li Zhang,Zhen Zhang

DOI: https://doi.org/10.1016/j.mee.2016.06.011

IF: 2.3

2016-01-01

Microelectronic Engineering

Abstract:Hydrogen silsesquioxane (HSQ) has been used as a negative tone resist in electron beam lithography to define sub-10nm patterns. The spontaneous polymerization in HSQ, usually called aging in this context, sets a restricted period of time for a vendor-warranted use in patterning such small features with satisfactory line-edge roughness (LER). Here, we study the effect of HSQ aging on sensitivity and LER by focusing on exposing line patterns of 10nm width in various structures. The results show that the 10nm lines are easily achievable and the LER of the patterned lines remains unaltered even with HSQ that is stored 10months beyond the vendor-specified expiration date. However, an increasingly pronounced decrease with time of the threshold electron dose (Dth), below which the line width would become less than 10nm, is observed. After the HSQ expiration for 10months, the 10nm lines can be manufactured by reducing Dth to a level that is technically manageable with safe margins. In addition, the inclusion of a prebaking step at 220°C to accelerate the aging process results in a further reduced Dth for the 10nm lines and thereby leads to a shortened writing time. The time variation of Dth with respect to the vendor-specified production date of HSQ is found to follow an exponential function of time and can be associated to the classical nucleation-growth polymerization process in HSQ.
Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

Andreas Frommhold,Alexandra McClelland,Dongxu Yang,Richard E. Palmer,John Roth,Yasin Ekinci,Mark C. Rosamund,Alex P. G. Robinson

DOI: https://doi.org/10.1117/12.2085672

2015-01-01

Abstract:We have synthesized a new resist molecule and investigated its high-resolution capability. The material showed resolved line-spaces with 14 nm half-pitch (hp) and the potential to pattern 11 nm hp features. Line edge roughness values as low as 3.15 nm were seen in optimized formulations. The dose-to-size is estimated at around 20-30 mJ/cm2. The role of the molecule in the patterning process was studied by comparing it with structurally similar compounds. Furthermore we present first results from exposures of our materials at the Berkeley Micro Exposure Tool. Finally it is also demonstrated that the material works as a resist in 100 kV electron beam lithography as well.
A strategy to fabricate nanostructures with sub-nanometer line edge roughness

Xin Zhuang,Yunsheng Deng,Yue Zhang,Kaimin Wang,Yulong Chen,Shiyang Gao,Jingfu Xu,Liqiu Wang,Xing Cheng

DOI: https://doi.org/10.1088/1361-6528/ad6e88

IF: 3.5

2024-09-25

Nanotechnology

Abstract:Line edge roughness (LER) has been an important issue in the nanofabrication research, especially in integrated circuits. Despite numerous research studies has made efforts on achieving smaller LER value, a strategy to achieve sub-nanometer level LER still remains challenging due to inability to deposit energy with a profile of sub-nanometer LER. In this work, we introduce a strategy to fabricate structures with sub-nanometer LER, specifically, we use scanning helium ion beam to expose hydrogen silsesquioxane (HSQ) resist on thin SiNx membrane (∼20 nm) and present the 0.16 nm spatial imaging resolution based on this suspended membrane geometric construction, which is characterized by scanning transmission electron microscope (STEM). The suspended membrane serves as an energy filter of helium ion beam and due to the elimination of backscattering induced secondary electrons, we can systematically study the factors that influences the LER of the fabricated nanostructures. Furthermore, we explore the parameters including step size, designed exposure linewidth (DEL), delivered dosage and resist thickness and choosing the high contrast developer, the process window allows to fabricate lines with 0.2 nm LER is determined. AFM measurement and simulation work further reveal that at specific beam step size and DEL, the nanostructures with minimum LER can only be fabricated at specific resist thickness and dosage.
Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

Zuwei Liu,Xiaodan Gu,Justin Hwu,Simone Sassolini,Deirdre L Olynick

DOI: https://doi.org/10.1088/0957-4484/25/28/285301

IF: 3.5

2014-06-27

Nanotechnology

Abstract:The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology. Despite the advances in BCP lithography, plasma pattern transfer remains a major challenge. We use controlled and low substrate temperatures during plasma etching of a chromium hard mask and then the underlying substrate as a route to high aspect ratio sub-10 nm silicon features derived from BCP lithography. Siloxane masks were fabricated using poly(styrene-b-siloxane) (PS-PDMS) BCP to create either line-type masks or, with the addition of low molecular weight PS-OH homopolymer, dot-type masks. Temperature control was essential for preventing mask migration and controlling the etched feature's shape. Vertical silicon wire features (15 nm with feature-to-feature spacing of 26 nm) were etched with aspect ratios up to 17 : 1; higher aspect ratios were limited by the collapse of nanoscale silicon structures. Sub-10 nm fin structures were etched with aspect ratios greater than 10 : 1. Transmission electron microscopy images of the wires reveal a crystalline silicon core with an amorphous surface layer, just slightly thicker than a native oxide.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
E-beam lithography using dry powder resist of hydrogen silsesquioxane having long shelf life

Jiashi Shen,Ferhat Aydinoglu,Mohammad Soltani,Bo Cui

DOI: https://doi.org/10.1116/1.5079657

2019-03-01

Abstract:Hydrogen silsesquioxane (HSQ) is arguably the most popular negative e-beam resist for academic research. One of the most significant advantages of HSQ is its ultrahigh resolution. However, it has a short shelf life, which increases its cost. As an alternative, a new type of dry powder HSQ resist resin (Applied Quantum Materials, referred to as AQM) was introduced here, the shelf life of which can be considered as infinitely long. A small amount of the powder can be dissolved in a solvent as needed right before exposure. Furthermore, this powder HSQ resist has a similar resolution and sensitivity parameters. By using the high-contrast development process with a salty developer, a 7.5 nm half-pitch nested “L” shape structure is achieved.
High aspect ratio ultrathick micro-stencil by JSR THB-430N negative UV photoresist

Fan-Gang Tseng,Chih-Sheng Yu

DOI: https://doi.org/10.1016/S0924-4247(02)00018-3

2002-01-01

Abstract:A novel way by employing JSR THB-430N negative tone resist to replace SU-8 resist for ultrathick plating mold fabrication is proposed in this paper. SU-8 is a common resist utilized for fabrication of high aspect ratio micro-structures. However, it is well known that SU-8 is hard to strip when served as a plating mold, especially in ultrathick and high aspect ratio regions. In contrast, cured THB-430N resist proposed in this paper can be softened in acetone and then easily striped by THB-S1 stripper without damage of micro-structures. Current approach using THB-430N resist can reach a structure height of 1.4 mm and an aspect ratio at least 5. Low power ultrasound has been employed to eliminate undercut problem and reduce developing time [Microsyst. Technol., in press]. Through-mold plating and PR striping of 1.4 mm thick THB-430N resist has been successfully demonstrated, and the plated thick copper structures show good structure integrity. (C) 2002 Elsevier Science B.V. All rights reserved.
Microfabrication of Nano-Scale Feature Lines

任黎明,王文平,陈宝钦,周毅,黄如,张兴

DOI: https://doi.org/10.3321/j.issn:0253-4177.2004.12.034

2004-01-01

Abstract:Electron-beam lithography with high resolution and ICP etching with high selectivity-ratio and high anisotropy are investigated. Using chemically amplified resist SAL-601 as the electron resist, optimal process parameters of electron-beam lithography and ICP etching are achieved. These parameters are combined with electron-beam proximity correction to form 30 nm lines with clear-cut cross-sectional profiles.
λ/30 inorganic features achieved by multi-photon 3D lithography

Feng Jin,Jie Liu,Yuan-Yuan Zhao,Xian-Zi Dong,Mei-Ling Zheng,Xuan-Ming Duan

DOI: https://doi.org/10.1038/s41467-022-29036-7

IF: 16.6

2022-03-15

Nature Communications

Abstract:Abstract It’s critically important to construct arbitrary inorganic features with high resolution. As an inorganic photoresist, hydrogen silsesquioxane (HSQ) has been patterned by irradiation sources with short wavelength, such as EUV and electron beam. However, the fabrication of three- dimensional nanoscale HSQ features utilizing infrared light sources is still challenging. Here, we demonstrate femtosecond laser direct writing (FsLDW) of HSQ through multi-photon absorption process. 26 nm feature size is achieved by using 780 nm fs laser, indicating super-diffraction limit photolithography of λ/30 for HSQ. HSQ microstructures by FsLDW possess nanoscale resolution, smooth surface, and thermal stability up to 600 °C. Furthermore, we perform FsLDW of HSQ to construct structural colour and Fresnel lens with desirable optical properties, thermal and chemical resistance. This study demonstrates that inorganic features can be flexibly achieved by FsLDW of HSQ, which would be prospective for fabricating micro-nano devices requiring nanoscale resolution, thermal and chemical resistance.

multidisciplinary sciences
Process Research of High Aspect Ratio Microstructure Using SU-8 Resist

J. Liu,B. Cai,J. Zhu,G. Ding,X. Zhao,C. Yang,D. Chen

DOI: https://doi.org/10.1007/s00542-002-0242-2

2004-01-01

Microsystem Technologies

Abstract:SU-8 is a negative, epoxy type, near-UV photoresist. This resist has been specifically developed for ultrathick, high-aspect-ratio MEMS-type applications using standard lithography equipment. However, in practice, SU-8 has shown to be very sensitive to process parameter variation. The orthogonal array was used in our experiments in order to improve the lithography quality and analyze the interaction among the parameters. The analyses show that the interaction between the exposure dose and post exposure bake has played an important role in adhesion between SU-8 resist and the substrate. The proposed process conditions are given. The output structure has straight sidewall profile, fine line and good space resolution. The aspect ratio is larger than 20. Moreover, several metallic films are used as substrates. The Ti film with oxidation treatment was found to have the strongest adhesion to the resist. The result will help to open possibilities for low-cost LIGA-type process for MEMS applications.
Imprint Lithography with 25-Nanometer Resolution

Stephen Y. Chou,Peter R. Krauss,Preston J. Renstrom

DOI: https://doi.org/10.1126/science.272.5258.85

IF: 56.9

1996-04-05

Science

Abstract:A high-throughput lithographic method with 25-nanometer resolution and smooth vertical sidewalls is proposed and demonstrated. The technique uses compression molding to create a thickness contrast pattern in a thin resist film carried on a substrate, followed by anisotropic etching to transfer the pattern through the entire resist thickness. Metal patterns with a feature size of 25 nanometers and a period of 70 nanometers were fabricated with the use of resist templates created by imprint lithography in combination with a lift-off process. With further development, imprint lithography should allow fabrication of sub-10-nanometer structures and may become a commercially viable technique for manufacturing integrated circuits and other nanodevices.

multidisciplinary sciences
A Novel Pmma/Neb Bilayer Process for Sub-20 Nm Gold Nanoslits by A Selective Electron Beam Lithography and Dry Etch

Xiaqi Huang,Jinhai Shao,Chialin Tsou,Sichao Zhang,Bingrui Lu,Ling Hao,Yan Sun,Yifang Chen

DOI: https://doi.org/10.1016/j.mee.2017.02.007

IF: 2.3

2017-01-01

Microelectronic Engineering

Abstract:A novel electron beam lithography process using PMMA/NEB bilayer was successfully developed for the generation of ultrafine slits as well as broad trenches in a thick gold film. Slit-widths from micrometers down to sub-20nm as the minimum feature size have been achieved. Electron beam lithography on the bilayer of PMMA/NEB with opposite tones between the top and the bottom layer was carefully studied by the contrast curve method. The processing parameters in both electron beam lithography and dry-etch were optimized for achieving ultrafine PMMA/NEB lines as the templates for forming nanoslits in Au films by the subsequent metallization and lift-off. The developed process is not only capable of replicating nano-trenches in Au film, but also applicable for manufacturing concave nanostructures in metals as a whole.
Fabrication of 11-Nm-wide Silica-Like Lines Using X-Ray Diffraction Exposure

Zhu Xiao-Li,Xie Chang-Qing,Zhang Man-Hong,Liu Ming,Chen Bao-Qin,Pan Feng

DOI: https://doi.org/10.1088/0256-307x/26/8/086803

2009-01-01

Abstract:Fine silica-like lines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm- wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist (HSQ). By precisely controlling the mask-wafer gap at 10 mu m using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.
Application of Multi-Mask Layers for High Aspect Ratio Soft Mold Imprint

Zhihao Wang,Tangyou Sun,Lei Wang,Qiang Zuo,Yanli Zhao,Zhimou Xu,Wen Liu

DOI: https://doi.org/10.1088/0960-1317/22/12/125025

2012-01-01

Journal of Micromechanics and Microengineering

Abstract:Soft mold imprinting has been widely used to improve quality and uniformity in large area nano-imprint processes because of its flexibility. However, the aspect ratio of soft mold imprinting is limited because of its physical properties. In this paper, a multi-mask layers transfer process was demonstrated to realize a high aspect ratio in the soft mold imprint process. In this process, a thin hard mask was used as an intermediate mask for a high aspect ratio mask layer fabrication. Based on this, a 60 nm line width gratings mask, whose aspect ratio is higher than 4, was fabricated; we also realized a uniform photonic crystal (PC) pattern on large and rough gallium nitride (GaN) epitaxial wafers.
Single-photon-multi-layer-interference lithography for high-aspect-ratio and three-dimensional SU-8 micro-/nanostructures

Siddharth Ghosh,G. K. Ananthasuresh

DOI: https://doi.org/10.1038/srep18428

IF: 4.6

2016-01-04

Scientific Reports

Abstract:AbstractWe report microstructures of SU-8 photo-sensitive polymer with high-aspect-ratio, which is defined as the ratio of height to in-plane feature size. The highest aspect ratio achieved in this work exceeds 250. A multi-layer and single-photon lithography approach is used in this work to expose SU-8 photoresist of thickness up to 100 μm. Here, multi-layer and time-lapsed writing is the key concept that enables nanometer localised controlled photo-induced polymerisation. We use a converging monochromatic laser beam of 405 nm wavelength with a controllable aperture. The reflection of the converging optics from the silicon substrate underneath is responsible for a trapezoidal edge profile of SU-8 microstructure. The reflection induced interfered point-spread-function and multi-layer-single-photon exposure helps to achieve sub-wavelength feature sizes. We obtained a 75 nm tip diameter on a pyramid shaped microstructure. The converging beam profile determines the number of multiple optical focal planes along the depth of field. These focal planes are scanned and exposed non-concurrently with varying energy dosage. It is notable that an un-automated height axis control is sufficient for this method. All of these contribute to realising super-high-aspect-ratio and 3D micro-/nanostructures using SU-8. Finally, we also address the critical problems of photoresist-based micro-/nanofabrication and their solutions.

multidisciplinary sciences
Development of the High Voltage E-Beam Lithography System

Zheng Ren,Qunqing Li,Li Han

DOI: https://doi.org/10.1109/edst.2007.4289791

2007-01-01

Abstract:High voltage electron beam lithography has a number of advantages over conventional 50kV-voltage e-beam lithography systems, such as reducing proximity effect, reducing line-width variation, and obtaining high aspect ratios of line height to gap width. The new high voltage e-beam lithography system is based on a JEOL JEM2000EX Transmission Electron Microscope (TEM) with scanning system. As the sample is immersed in the high intensity magnetic field during the exposure process, the movement of electrons in the resist and substrate is limited in a smaller area. By using this system to carry out some exposure experiments, we have obtained the structure with 10:1 high-width aspect ratio on a 3-micron-thick PMMA layer with a large area.
Fabrication of Ultrathick Micromolds Using JSR THB-430N Negative UV Photoresist

Fan-Gang Tseng,Chih-Sheng Yu

DOI: https://doi.org/10.1007/978-3-642-59497-7_376

2001-01-01

Abstract:This paper reports using JSR THB-430N negative tone resist to replace SU-8 resist for ultra-thick-plating-mold fabrication. The well-known problem for using SU-8 resist as plating mold is the difficulty of resist striping, especially in ultra thick and high aspect ratio ranges. In contrast, cured THB-430N resist can be dissolved in acetone and then easily striped by THB-S1 stripper without damage of microstructures. Current approach using THB-430N resist can reach a structure height of 1.4 mm and an aspect ratio at least 8. Low power ultrasound has been proved to be essential in the elimination of undercut and reduction of developing time. Striping of 1.4-mm-thick THB-430N resist molds has been demonstrated by two-step striping process with acetone and THB-S1 stripper, respectively, and shows good integrity of plated micro metal structures.
Suppressing of Secondary Electron Diffusion for High-Precision Nanofabrication

Qianqian Wang,Yuting Zhou,Xiaolin Wang,Hongqiang Gao,Zhiwen Shu,Ziyu Hu,Peipei Tao,Yasin Ekinci,Michaela Vockenhuber,Yiqin Chen,Huigao Duan,Hong Xu,Xiangming He

DOI: https://doi.org/10.1016/j.mattod.2023.06.005

IF: 24.2

2023-01-01

Materials Today

Abstract:Nanopatterning is a well-established approach to fabricating nanostructures in electronics and optics, and exploiting patterning strategy to achieve smaller feature sizes and higher precision is urgently and constantly pursued. State-of-the-art extreme ultraviolet lithography and electron beam lithography have proven to produce smaller sizes. However, for such energetic radiation-based approaches, the serious diffusion behavior of the radiolytic low-energy secondary electrons will result in unpredictable defects in the unexposed matrix, limiting the ultimate resolution and hindering its potential in sub 10 nm patterning. Herein, we report significant progress in high-resolution patterning via suppressing of residues caused by secondary electron diffusion, and 10 nm line-space nanostructures are achieved by utilizing a free radical quencher in patterning a highly sensitive zirconium-containing photoresist. Lithography evaluation combined with theoretical calculation reveals this novel radical quencher approach can effectively suppress undesired electronic excitation and ionization reactions, thereby significantly improving resolution and edge roughness. By inhibiting secondary electron-induced active species, this quenching mechanism is found to increase the onset dose and effectively narrow the energy deposition; thus improving the patterning contrast and facilitating the acquisition of straight lines with sharp edges. This work provides a new perspective on active species diffusion control for higher precision nanoscale fabrication.
Chemically Amplified Fullerene Resists, Spin-on Fullerene Hardmasks and High Aspect Ratio Etching

Andreas Frommhold,Dong X. Yang,Jedsada Manyam,Mayanditheuar Manickam,Edward Tarte,Jon A. Preece,Richard E. Palmer,Alex P. G. Robinson

DOI: https://doi.org/10.1109/nano.2012.6322209

2012-01-01

Abstract:As resolution requirements increase there is a need for high performance ultra thin resists, which has led to significant interest in molecular resists. We have previously described a fullerene based resist whose electron beam lithography properties include sparse resolution of ~12 nm, half pitch ~20 nm, sub 5 nm linewidth roughness (LWR), sub 10 μC/cm2 sensitivity, and high etch durability. The material shows extremely wide process latitude and LWR <;2 nm in sparse features. Initial results of exposure via EUV lithography indicate a resolution capability of at least 30 nm half pitch. As resist films have become thinner to mitigate aspect ratio related pattern collapse, etching has become more challenging. We have studied the ICP plasma etching of high-resolution patterns in sub 40 nm thickness films of the fullerene resist. Silicon structures of 20 nm width and more than 100 nm height have been demonstrated. Additionally we have developed a fullerene based spin-on-carbon for use in a tri-layer etching scheme allowing aspect ratios greater than 19:1 to be achieved in room temperature ICP etching of sub 30 nm patterns. The same trilayer scheme has also been deployed for colloidal lithography fabrication of sub 100 nm silicon pillars with aspect ratios >;17:1.
Extreme ultraviolet lithography reaches 5 nm resolution

Iason Giannopoulos,Iacopo Mochi,Michaela Vockenhuber,Yasin Ekinci,Dimitrios Kazazis

2024-02-28

Abstract:Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA) EUV scanners. Hitherto, EUV interference lithography (EUV-IL) utilizing transmission gratings has been a powerful patterning tool for the early development of EUV resists and related processes, playing a key role in exploring and pushing the boundaries of photon-based lithography. However, achieving pattering with HPs well below 10 nm using this method presents significant challenges. In response, our study introduces a novel EUV-IL setup that employs mirror-based technology and circumvents the limitations of diffraction efficiency towards the diffraction limit that is inherent in conventional grating-based approaches. We present line/space patterning of HSQ resist down to HP 5 nm using the standard EUV wavelength 13.5 nm, and the compatibility of the tool with shorter wavelengths beyond EUV. The mirror-based interference lithography tool paves the way towards the ultimate photon-based resolution at EUV wavelengths and beyond. This advancement is vital for scientific and industrial research, addressing the increasingly challenging needs of nanoscience and technology and future technology nodes of CMOS manufacturing in the few-nanometer HP regime.

Optics,Applied Physics
Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da)

Mohammad S M Saifullah,Anil Kumar Rajak,Kevin A Hofhuis,Nikhil Tiwale,Zackaria Mahfoud,Andrea Testino,Prajith Karadan,Michaela Vockenhuber,Dimitrios Kazazis,Suresh Valiyaveettil,Yasin Ekinci

DOI: https://doi.org/10.1021/acsnano.4c03939

IF: 17.1

2024-08-22

ACS Nano

Abstract:Resists that enable high-throughput and high-resolution patterning are essential in driving the semiconductor technology forward. The ultimate patterning performance of a resist in lithography is limited because of the trade-off between resolution, line-width roughness, and sensitivity; improving one or two of these parameters typically leads to a loss in the third. As the patterned feature sizes approach angstrom scale, the trade-off between these three metrics becomes increasingly hard to...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology

High Aspect Ratio (~25:1) Sub-10 Nm HSQ Lines Using Electron Beam Lithography

Aged Hydrogen Silsesquioxane for Sub-10 Nm Line Patterns

Towards 11nm Half-Pitch Resolution for a Negative-Tone Chemically Amplified Molecular Resist Platform for Extreme-Ultraviolet Lithography

A strategy to fabricate nanostructures with sub-nanometer line edge roughness

Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns

E-beam lithography using dry powder resist of hydrogen silsesquioxane having long shelf life

High aspect ratio ultrathick micro-stencil by JSR THB-430N negative UV photoresist

Microfabrication of Nano-Scale Feature Lines

λ/30 inorganic features achieved by multi-photon 3D lithography

Process Research of High Aspect Ratio Microstructure Using SU-8 Resist

Imprint Lithography with 25-Nanometer Resolution

A Novel Pmma/Neb Bilayer Process for Sub-20 Nm Gold Nanoslits by A Selective Electron Beam Lithography and Dry Etch

Fabrication of 11-Nm-wide Silica-Like Lines Using X-Ray Diffraction Exposure

Application of Multi-Mask Layers for High Aspect Ratio Soft Mold Imprint

Single-photon-multi-layer-interference lithography for high-aspect-ratio and three-dimensional SU-8 micro-/nanostructures

Development of the High Voltage E-Beam Lithography System

Fabrication of Ultrathick Micromolds Using JSR THB-430N Negative UV Photoresist

Suppressing of Secondary Electron Diffusion for High-Precision Nanofabrication

Chemically Amplified Fullerene Resists, Spin-on Fullerene Hardmasks and High Aspect Ratio Etching

Extreme ultraviolet lithography reaches 5 nm resolution

Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da)