PERIODIC CAVITIES ON THE IR-ABSORBER FOR RESPONSIVITY ENHANCEMENT OF CMOS-MEMS THERMOELECTRIC IR SENSOR

Yung-Chen Li,Tien Chou,Pen-Sheng Lin,Yu-Cheng Huang,Fuchi Shih,You-An Lin,Da-Jen Yen,Mei-Feng Lai,Weileun Fang
DOI: https://doi.org/10.1109/mems49605.2023.10052530
2023-01-01
Abstract:This study proposes a periodic cavities structure on the absorber of a CMOS-MEMS thermoelectric (TE) infrared (IR) sensor implemented through TSMC 0.18 μm 1P6M standard CMOS platform for absorption enhancement. Design proposed in this study features: (1) utilizing periodic cavities on the absorber to enhance IR absorption, (2) increasing cavity density to further improve IR absorption, (3) leveraging the advantages of CMOS platform to realize this sub-wavelength optical structure. The TE IR sensor in this study is aimed to be applied in human body temperature detections with a spectral sensing range from 8-14 μm wavelength. Absorption spectrum measurements show the enhancement within target band. Responsivity measurements also reveal cavity structures on the absorber can enhance the performance by 10.8%.
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