Abstract:In this research, a new application of reduced graphene oxide (rGO) for a complementary metal-oxide-semiconductor (CMOS)-MEMS infrared (IR) sensor and emitter is proposed. Thorough investigations of IR properties including absorption and emission were proceeded with careful calibration and measurement with a CMOS thermoelectric sensor. The thermocouples of the sensor consist of aluminum and n-polysilicon layers which are fabricated with the TSMC 0.35 μm CMOS process and MEMS post-process. In order to improve the adhesion of rGO, a sensing area at the center of the membrane is formed with an array of holes, which is easy for the drop-coating of rGO material upon the sensing region. To evaluate the performance of the IR sensor with rGO, different conditions of the IR thermal radiation experiments were arranged. The results show that the responsivity of our proposed CMOS-MEMS IR sensor with rGO increases by about 77% compared with the sensor without rGO. For different IR absorption incident angles, the measurement of field of view shows that the CMOS-MEMS IR sensor with rGO has a smaller view angle, which can be applied for the application of long-distance measuring. In addition, characteristics of the proposed thermopile are estimated and analyzed with comparisons to the available commercial sensors by the experiments.

What problem does this paper attempt to address?

This paper is primarily dedicated to researching a novel infrared sensor that combines Complementary Metal-Oxide-Semiconductor (CMOS) and Micro-Electro-Mechanical Systems (MEMS), and explores the role of reduced Graphene Oxide (rGO) in enhancing the performance of such sensors. ### Research Background and Objectives - **Background**: Infrared sensors have wide applications in fields such as temperature sensing and gas detection. To improve the performance of infrared sensors, researchers have been exploring new materials and technologies that can enhance the efficiency of infrared radiation absorption. In recent years, with the development of CMOS-MEMS technology, the miniaturization and cost reduction of infrared sensors have become possible. - **Objective**: To improve the sensitivity and absorption capability of infrared radiation by using reduced Graphene Oxide (rGO) on CMOS-MEMS infrared sensors. ### Main Research Content - **Design and Fabrication**: The paper describes the design and fabrication process of a CMOS-MEMS infrared sensor that includes a floating membrane. The sensor contains a central sensing area for coating rGO material. - **Experimental Methods**: The authors measured the infrared radiation absorption characteristics to verify the impact of rGO on sensor performance. Additionally, they conducted comparative analyses of the frequency response and noise characteristics of the sensor under different conditions. - **Results and Discussion**: The results show that after adding rGO, the responsivity of the infrared sensor increased by approximately 77% compared to when rGO was not added. Furthermore, field-of-view measurements of the sensor under different infrared absorption incident angles indicate that the CMOS-MEMS infrared sensor with rGO has a smaller viewing angle, making it suitable for long-distance measurement applications. ### Conclusion This paper proposes a method to improve CMOS-MEMS infrared sensors using rGO. Experimental results demonstrate that this method can effectively enhance the infrared radiation absorption capability and responsivity of the sensor, providing new insights for the development of high-performance infrared sensing technology.

Research on a CMOS-MEMS Infrared Sensor with Reduced Graphene Oxide

Performance Enhance of CMOS-MEMS Thermoelectric Infrared Sensor by Using Sensing Material and Structure Design

Radiation Enhancement by Graphene Oxide on Microelectromechanical System Emitters for Highly Selective Gas Sensing

Reduced Graphene Oxide/carbon Black Thin-Film Mid-Infrared Photodetector

Novel Absorber Membrane and Thermocouple Designs for CMOS-MEMS Thermoelectric Infrared Sensor

Reduced graphene oxide (rGO) based wideband optical sensor and the role of Temperature, Defect States and Quantum Efficiency

Laser-scribed highly responsive infrared detectors with semi-reduced graphene oxide

PERIODIC CAVITIES ON THE IR-ABSORBER FOR RESPONSIVITY ENHANCEMENT OF CMOS-MEMS THERMOELECTRIC IR SENSOR

Novel Terraced Cavities Design on IR-Absorber Surface for CMOS-MEMS Thermoelectric Infrared Sensor

Graphene oxide/carbon nanoparticle thin film based IR detector: Surface properties and device characterization

Detectivity Enhancement for CMOS-MEMS IR Sensor by Thermocouple Arrangement

Research of QCM humidity sensor based on reduced graphene oxide-polyethylene oxide composite films

Design and Fabrication of MOS Type Gas Sensor with Vertically Integrated Heater Using CMOS-MEMS Technology

Uncooled Infrared Detection Using CMOS Thermomechanical Capacitive Sensors

Monolithic Integrated Cmos-Mems Mos Type Gas Sensor And Novel Heater For Sensitivity And Power Consumption Enhancement

CMOS MEMS Thermoelectric Infrared Sensor With Plasmonic Metamaterial Absorber for Selective Wavelength Absorption and Responsivity Enhancement

Vertical Junction Photodetectors Based on Reduced Graphene Oxide/silicon Schottky Diodes

Reduced graphene oxide-based broad band photodetector and temperature sensor: effect of gas adsorption on optoelectrical properties

Novel High Thermal Resistance Structure Design for Responsivity and Detectivity Enhancements of Cmos Mems Thermoelectric Infrared Sensor

Fabrication and Evaluation of a Graphene Oxide-Based Capacitive Humidity Sensor

Non-Imaging Digital CMOS-SOI-MEMS Uncooled Passive Infra-Red Sensing Systems