Laser-scribed highly responsive infrared detectors with semi-reduced graphene oxide

Rui Feng,Youwei Zhang,Laigui Hu,Jing Chen,Muhammad Zaheer,Zhi-Jun Qiu,Pengfei Tian,Chunxiao Cong,Qingmiao Nie,Wei Jin,Ran Liu
DOI: https://doi.org/10.7567/APEX.11.015101
IF: 2.819
2018-01-01
Applied Physics Express
Abstract:Graphene-based optoelectronic devices, including reduced graphene oxide (RGO) devices, commonly exhibit a large dark current and low on/off ratio with high dark-power consumption and a small responsivity. In this study, semi-RGO-based infrared photodetectors were directly "written" by using lasers, which can exhibit a small dark current of approximately 12 mu A/cm(2) with a high responsivity of approximately 0.18A/W at 1,550 nm. Both the dark current and response speed can be tuned with GO as the gate dielectric in a field-effect transistor structure. These findings suggest the possibility of the three-dimensional "writing" of a micro-optoelectronic device or system with a low cost and high performance. (C) 2018 The Japan Society of Applied Physics
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