Enhanced performance of self-powered ZnO-based PEC type UV photodetectors by loading GQDs to construct heterojunctions
Meixian Li,Jun Liu,Tao Zhang,Nina Liang,Lijuan Yan,Fengzhen Lv,Wenjie Kong,Fuchi Liu,Lizhen long
DOI: https://doi.org/10.1016/j.materresbull.2023.112657
IF: 5.6
2023-12-23
Materials Research Bulletin
Abstract:The construction of semiconductor heterojunctions is an effective approach to enhance the performance of optoelectronic devices. In this study , graphene-quantum-dots (GQDs) were grown on ZnO nanorods arrays in - situ to form intimate heterojunctions. The fabricated photoelectrochemical (PEC) photodetector based on ZnO/GQDs heterojunctions displayed good self- powering characteristics, with an on/off current ratio of approximately 21 at zero bias, which was almost seven-fold higher than that of the bare ZnO device. The responsivity and detectivity of the ZnO/GQDs-based photodetector were also enhanced compared with those of bare ZnO devices. A unique type-II band alignment was established at the ZnO/GQDs heterojunction interface, which facilitated the carrier transfer. Moreover, the ZnO/GQDs heterojunction reduced the passivation of the surface states, resulting in large energy-band bending and an internal electric field at the semiconductor/electrolyte interface, which provided a powerful driving force for the separation and transport of photogenerated carriers. These combined effects enhance the performance of the photodetector, indicating that this approach can be used to fabricate high-performance PEC optoelectronic devices.
materials science, multidisciplinary