MONOLITHIC INTEGRATION OF PLASMONIC META-MATERIAL ABSORBER WITH CMOS-MEMS INFRARED SENSOR FOR RESPONSIVITY ENHANCEMENT AND HUMAN DETECTION APPLICATION

Pen-Sheng Lin,Ting-Wei Shen,Kai-Chieh Chang,Weileun Fang
DOI: https://doi.org/10.1109/mems46641.2020.9056382
2020-01-01
Abstract:This study monolithically integrates a metal-insulator-metal-based (MIM) plasmonic metamaterial absorber (PMA) with a thermoelectric (TE) infrared (IR) sensor using standard TSMC CMOS platform. The proposed design extends the strip -via releasing hole structure in [1] to further integrate MIM absorber with TE IR sensor. Such design exhibits three merits: (1) the line width requirement of MIM absorber is achieved by CMOS process, (2) the absorption peaks of MIM absorbers can be modulated by pattern designs in the epsilon-near-pole region, and (3) the MIM absorbers can be designed to broaden the absorption spectrum of IR sensor. In application, the absorption spectrum of IR sensor is designed within 8-14 mu m in this study for human detection application. Measurement result demonstrates the integration of MIM absorber and IR sensor can achieve 21% responsivity improvement and the measured absorption spectrum matches with simulation.
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