Understanding the Complementary Resistive Switching in Egg Albumen-Based Single Sandwich Structure with Non-Inert Al Electrode

Xia Xiao,Jiajun Guo,Zexin Gao,Dashuai Zhai,Ruxin Liu,Shuchao Qin,Mehran Khan Alam,Zhi Sun
DOI: https://doi.org/10.1088/2053-1591/acd67d
IF: 2.025
2023-01-01
Materials Research Express
Abstract:The concept of complementary resistive switching (CRS) has been proposed as a potential solution for mitigating the unwanted sneak path current intrinsic to large-scale crossbar memory arrays. In this study, CRS devices based on egg albumen are fabricated using non-inert Al layers as the top electrodes (TE). The Al/Albumen/indium tin oxide (ITO) single sandwich structure achieves stable and reproducible CRS behavior without requiring a forming process. The application of a compliance current leads to an evolution from CRS to bipolar resistive switching (BRS). Furthermore, the BRS analog switching feature enables the emulation of synaptic functions, like paired-pulse facilitation (PPF) and paired-pulse depression (PPD). Our systematic and in-depth analyses demonstrate that the CRS is due to the interfacial Schottky barriers originating from the Al electrode oxidation. Consequently, the resistance switching behavior in the albumen-based cells with inert Pt top electrodes can further validate this model. These findings provide significant insight into the role of non-inert electrodes and contribute to a comprehensive understanding of the CRS mechanism, which may facilitate the development of high-performance CRS biodevices.
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