High-performance Complementary Resistive Switching in Ferroelectric Film

Pan Zhang,Wenjing Zhai,Zhibo Yan,Xiang Li,Yongqiang Li,Shuhan Zheng,Yongsen Tang,Lin,J-M Liu
DOI: https://doi.org/10.1063/5.0043536
IF: 1.697
2021-01-01
AIP Advances
Abstract:The complementary resistive switch (CRS) offers a promising logic-in-memory functionality and is a potential solution to the "von Neumann bottleneck" problem, but the CRS structure composed of two anti-serially connected bipolar resistive switching cells limits device application. In this work, we report a high-performance CRS in a single layer of ferroelectric LiTaO3 film. The device has continuous tunable steady-states, stable operating voltages, a maximum off/on ratio more than 10(2), good retention longer than 10(5) s, and a good endurance of over 10(7) cycles. Besides, the energy consumption of the CRS is tunable by defect engineering. Experiments suggest that the ferroelectric domain switching with charged domain walls possibly contributes to the stability of the CRS in LiTaO3 film.
What problem does this paper attempt to address?