Abstract:Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which tunes electron localization length, thus resistivity, through electron trapping/detrapping. The low-resistance state is a metallic state while the high-resistance state is an insulating state, as established by conductivity studies from 2K to 300K. The material is exemplified by a Si3N4 thin film with randomly dispersed Pt or Cr. It has been extended to other materials, spanning a large library of oxide and nitride insulator films, dispersed with transition and main-group metal atoms. Nanometallic RRAMs have superior properties that set them apart from other RRAMs. The critical switching voltage is independent of the film thickness/device area/temperature/switching speed. Trapped electrons are relaxed by electron-phonon interaction, adding stability which enables long-term memory retention. As electron-phonon interaction is mechanically altered, trapped electron can be destabilized, and sub-picosecond switching has been demonstrated using an electromagnetically generated stress pulse. AC impedance spectroscopy confirms the resistance state is spatially uniform, providing a capacitance that linearly scales with area and inversely scales with thickness. The spatial uniformity is also manifested in outstanding uniformity of switching properties. Device degradation, due to moisture, electrode oxidation and dielectrophoresis, is minimal when dense thin films are used or when a hermetic seal is provided. The potential for low power operation, multi-bit storage and complementary stacking have been demonstrated in various RRAM configurations.

Improved Switching Stability in SiNx-based RRAM by Introducing Nitride Insertion Layer with High Conductivity

Tuning The Switching Behavior Of Binary Oxide-Based Resistive Memory Devices By Inserting An Ultra-Thin Chemically Active Metal Nanolayer: A Case Study On The Ta2o5-Ta System

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

All-Metal-Nitride RRAM Devices

A Novel Nitrogen-Doped SiOx Resistive Switching Memory with Low Switching Voltages

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

Endurance improvement technology with nitrogen implanted in the interface of WSiOx resistance switching device

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

Highly electrical resistive SiTiN<i><sub>x</sub></i> heating layers and diffusion barriers for PCRAM

Uniform, Fast, and Reliable LixSiOy-Based Resistive Switching Memory

A Systematic Investigation of TiN/CuxO/Cu RRAM with Long Retention and Excellent Thermal Stability

Conduction Mechanism and Improved Endurance in HfO 2 -Based RRAM with Nitridation Treatment

A Self-Rectifying $\hbox{hfo}_{x}$ -Based Unipolar RRAM with NiSi Electrode

Controlling the Degree of Forming Soft-Breakdown and Producing Superior Endurance Performance by Inserting BN-Based Layers in Resistive Random Access Memory

Resistive switching of silicon-rich-oxide featuring high compatibility with CMOS technology for 3D stackable and embedded applications

Low-Power Resistive Switching Characteristics in TiN/TaON/SiO2/Pt RRAM Devices for Neuromorphic Applications

SiNx‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration

Resistance switching devices based on amorphous insulator-metal thin films

Optimization of TiN/TaOx/HfO2/TiN RRAM Arrays for Improved Switching and Data Retention

The Development of Nanometer Solid State Storage Memory