Abstract:In preparing Cu2ZnSnSe4 (CZTSe) thin films, selenization at high Se pressure is likely to form a thick molybdenum diselenide (MoSe2) layer. An excessively thick MoSe2 layer degrades the performance of CZTSe solar cells. Annealing under low Se pressure has been suggested to prevent the formation of such a thick MoSe2 layer. However, the potential loss of Sn metal from CZTSe thin films at low Se pressure or high temperature raises the additional difficulty of controlling the compositions and phases of the films. Carefully controlling these selenization parameters to yield high-quality CZTSe thin films is important. This study investigates the loss of Sn and the formation of molybdenum diselenide in CZTSe thin films at low Se pressure. Three-step selenization at low Se pressure is performed on an electrodeposited Cu/Sn/Zn precursor to prepare high-quality CZTSe thin films. In the first step, rapid thermal annealing with a substrate temperature of 500°C and a low Se vapor pressure of 4.6Pa was performed to reduce the loss of Sn and the thickness of the MoSe2 layer, and thus to obtain a Cu-poor and Zn-rich film. In the second step, a high annealing temperature of 570°C and an inert gas at high pressure was used to improve elemental diffusion and increase the uniformity of the elemental distribution. In the third step, thermal annealing with a substrate temperature of 500°C and a low Se vapor pressure of 4.6Pa was performed to reduce the loss of Sn and the thickness of the MoSe2 layer, and to eliminate the impurity phase of SnSe (which was formed in the second step of annealing) on the surface of the CZTS films. The loss of Sn and the formation of molybdenum diselenide in the CZTSe thin films are negligible when this three-step selenization at low Se pressure is used. When the selenization parameters are properly controlled, CZTSe solar cells with an efficiency of as high as 8.2% can be obtained.

Eliminating Cracking Morphology of Solution-Processed CZTSSe Absorbers by Sn-rich Composition Engineering

Optimizing the Ratio of Sn4+ and Sn2+ in Cu2ZnSn(S,Se)4 Precursor Solution Via Air Environment for Highly Efficient Solar Cells

Microenvironment Created by SnSe2 Vapor and Pre‐Selenization to Stabilize the Surface and Back Contact in Kesterite Solar Cells

Effect of Sn Content in a CuSnZn Metal Precursor on Formation of MoSe2 Film during Selenization in Se+SnSe Vapor

Impact of Sn4+/Sn2+ Ratio in the Precursor Solution on the Performance of CZTSSe Solar Cell

Segmented Control of Selenization Environment for High‐Quality Cu2ZnSn(S,Se)4 Films Toward Efficient Kesterite Solar Cells

Passivating SnZn Defect and Optimizing Energy Level Alignment via Organic Silicon Salt Incorporation toward Efficient Solution‐Processed CZTSSe Solar Cells

A CZTSe Solar Cell with 8.2% Power Conversion Efficiency Fabricated Using Electrodeposited Cu/Sn/Zn Precursor and a Three-Step Selenization Process at Low Se Pressure

A Study on Cr Incorporation to Enhance Performance of CZTSSe Solar Cells Via Optimizing Selenization Condition

SnS-induced Element Diffusion Simultaneous Optimization of Interface and Bulk Defects in High-Efficiency CZTSSe Solar Cells

Beyond 10% efficient Cu2ZnSn(S,Se)4 solar cells: Effects of the introduction of SnS powder during selenization process

Effects of Selenization Conditions on Microstructure Evolution in Solution Processed Cu2ZnSn(S,Se)(4) Solar Cells

Surprising Efficiency Enhancement of Cu2ZnSn(S,Se)4 Solar Cells with Abnormal Zn/Sn Ratios

Growth of Cu2znsnse4 Film under Controllable Se Vapor Composition and Impact of Low Cu Content on Solar Cell Efficiency

Improvement of grain growth and composition distribution of Cu2ZnSn(S,Se)4 by using chloride-based precursor solution

Controlling selenization equilibrium enables high-quality Cu2ZnSn(S, Se)4 absorbers for efficient solar cells

A Robust Approach to Fabricate CZTSSe Absorber Layer for Solar Cells Via a Self-Selenizations Process Conducted by Concentrated Selenium Solution

Improving the Performance of Solution-Based CZTSSe Absorber by Selenization Annealing with Selenium Powder in Argon

On the Growth Process of Cu2ZnSn(S,Se)4 Absorber Layer Formed by Selenizing Cu–ZnS–SnS Precursors and Its Photovoltaic Performance

Fabrication of Cu2ZnSn(S,Se)4 absorber films by selenization of different Cu2ZnSnS4 nanocrystal coatings

Optimization of the Selenization Pressure Enabling Efficient Cu2ZnSn(S,Se)4 Solar Cells