2D Bi<sub>2</sub>Te<sub>3</sub>/Si heterostructure with high thermoelectric power factor enabled by interface regulated carrier injection

Lili Chen,Beibei Zhu,Jiayi Chen,Shanshan Xing,Li Tao
DOI: https://doi.org/10.1088/1361-6528/acc5f0
IF: 3.5
2023-01-01
Nanotechnology
Abstract:It has been highly demanded to optimize the charge carrier concentration in 2D Bi2Te3 to achieve enhanced thermoelectric performance. This work reveals that, constructing 2D Bi2Te3/Si heterostructure with tuned interfacial electronic band structure can meet the above needs. When the work function in Si substrate is decreased from 4.6 to 4.06 eV, the charge carrier concentration and electron effective mass are increased simultaneously. Consequently, the electrical conductivity of 2D Bi2Te3 on n(++)-Si has reaches up to 1250 S center dot cm(-1), which is 90% higher than the counterpart on SiO2/Si substrate, although the Seebeck coefficient in these two samples is around -103 mu V center dot K-1. The resultant power factor of 2D Bi2Te3/n(++)-Si heterostructure is 13.4 mu W center dot cm(-1)center dot K-2, which is one of the best values among similar studies ever reported. This work demonstrates a facile way to improve thermoelectric properties via interfacial engineering in a heterostructure.
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