The Transparent Mg:NiO/SnO2 Pn Junctions Toward Photovoltaic Conversion Enhancement Via the Potential Regulation of Mg-doping

Shu Tianyu,Lu Lei,Xu Yunlong,Li Hang,Que Lixin,Cao Jun,Shi Lei,Pan Jiaqi,Li Chaorong
DOI: https://doi.org/10.1007/s10854-022-09698-1
2023-01-01
Journal of Materials Science Materials in Electronics
Abstract:The transparent Mg:NiO/SnO2 pn junction with potential regulation of Mg-doping has been fabricated via a co-sputtering method. The transparent Mg-doped NiO/SnO2 pn junction (2Mg:NiO/SnO2) exhibits highly transmittance of ~ 85%, photovoltaic conversion enhancement of ~ 3.5 × 103 folds than intrinsic NiO/SnO2 pn junction, and decent stability during 10 week’s continuous cycle. It can be ascribed to the Mg-doping with potential regulation, carrier increasing and band gap extension, can optimize the photo-generated carrier concentration-mobility kinetic equilibrium efficiently to achieve a higher transparent photovoltaic conversion. Additionally, the high-quality pn junction can provide checkless interface for carrier transferring to increase photovoltaic conversion efficiency.
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