The Flexible Transparent N-Doped Cui/Agi Pn Junction Towards Enhanced Photovoltaic Conversion Via Interface Transition of in Situ Iodization

Jiaqi Pan,Yunlong Xu,Lei Lu,Lixin Que,Lei Shi,Jun Cao,Chaorong Li
DOI: https://doi.org/10.1016/j.surfin.2024.104971
IF: 6.2
2024-01-01
Surfaces and Interfaces
Abstract:The flexible transparent pn junction of N-doped CuI/AgI with interface transition is prepared via approach of continuous sputtering-in situ iodization method. N-doped CuI/AgI flexible pn junction exhibits transmittance of 85 %, photovoltaic enhancement of 1.3 x 104-folds, stable output during 10 weeks' cycle, and good flexible bending stability (1500 bending, 83.5 %). It's mainly attributed to that the appropriate flat-band potentials gradient and increased carrier injection achieved through N-doping, as well as ameliorating interface carrier immigration/diffusion through in situ iodization, both contribute significantly to carrier kinetic equilibrium, while the N-doping can balance a high transparency via stable-wide bandgap and optimizing inner crystallinity interface scattering. Additionally, the inorganic monoiodides and PEN substrate can provide a decent flexible stability for its actual applications.
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