Abstract:Capacitor structures utilized in modern dynamic random access memory (DRAM) cells require the conformal growth of high-k films on electrode materials. In this context, the atomic layer deposition (ALD) of rutile-phase TiO2 on nearly lattice-matched substrates such as RuO2 has been extensively explored. It is typically desired to grow such insulating films at high temperatures to ensure low defect concentrations and high crystallinity. However, with increasing growth temperature, it is also crucial to consider the aggravated effect of interface reactions that could potentially hinder final device performance. Here, we report the high-temperature ALD growth of TiO2 on RuO2 substrates using the heteroleptic precursor trimethoxy(pentamethylcyclopentadienyl)titanium ((CpMe5)Ti(OMe)3) and O3. High-quality, rutile-phase TiO2 films with large dielectric constants of ∼100 could be grown at temperatures exceeding 300 °C. When the growth temperature reaches 330 °C, we find that an anomalous RuO2 reduction reaction occurs due to interactions between the substrate and Ti precursor. The reduced Ru is transformed into volatile RuO4 during the subsequent O3 injection steps, resulting in partial etching of the substrate. Simple RuO2/TiO2/RuO2 capacitor devices fabricated from optimized films demonstrate excellent dielectric performance with an equivalent oxide thickness (EOT) of 0.5 nm at leakage current densities of less than 10–7 A/cm2. A further reduction of EOT to 0.4 nm could be achieved by implementing a single cycle of Al doping to the TiO2 films, surpassing the benchmark values proposed for next-generation DRAM capacitors by a safe margin. Our findings clearly showcase the benefits of high-temperature ALD in the semiconductor technology, as well as providing guidelines for the interpretation of the convoluted interface reactions tied to its implementation.

In Quest of Low‐Leakage Dynamic Random Access Memory Enabled by Doped TiO2 Dielectrics

5.1 Å EOT and low leakage TiN/Al2O3/Hf0.5Zr0.5O2/Al2O3/TiN heterostructure for DRAM capacitor

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Misfit Dislocation Core Structures At Ba0.5 Sr0.5TiO3 /LaAlO3 Interfaces

High Capacitive Performance at Moderate Operating Field in (bi0.5na0.5) TiO3-based Dielectric Ceramics Via Synergistic Effect of Site Engineering Strategy

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

Interface engineering for substantial performance enhancement in epitaxial all-perovskite oxide capacitors

Oxidizer Engineering of ALD for Efficient Production of ZrO2 Capacitors in DRAM

Defect engineering in rare-earth-doped SrTiO 3 ceramics: Route to colossal capacitance material up to X9R capacitor standard

Low temperature crystallization of atomic-layer-deposited SrTiO 3 films with an extremely low equivalent oxide thickness of sub-0.4 nm

SrTiO3 and (Ba,Sr)TiO3 Films Epitaxially Grown on SrRuO3 Using Atomic Layer Deposition

Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications

High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose

Significantly Improved High K Dielectric Performance: Rare Earth Oxide As a Passivation Layer Laminated with TiO2 Film

A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

Improved Dielectric Constant and Leakage Current of ZrO$_{\text{2}}$-Based Metal–Insulator– Metal Capacitors by Si Doping

High-Temperature Atomic Layer Deposition of Rutile TiO 2 Films on RuO 2 Substrates: Interfacial Reactions and Dielectric Performance

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method

Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations