Abstract:A wake-up free Hf0.5Zr0.5O2 (HZO) ferroelectric film with the highest remnant polarization (Pr) value to-date was achieved through tuning of the ozone pulse duration, the annealing process, and the metal/insulator interface. The ozone dosage during the atomic layer deposition of HZO films appears to be a crucial parameter in suppressing the mechanisms driving the wake-up effect. A tungsten capping electrode with a relatively low thermal expansion coefficient enables the induction of an in-plane tensile strain, which increases the formation of the orthorhombic phase while decreasing the formation of the monoclinic phase during the cooling step of the annealing process. Therefore, increasing the annealing temperature TA followed by rapid cooling to room temperature resulted in a substantial increase in the 2Pr value (64 uC/cm2). However, the leakage current increased considerably, which can affect the performance of metal-insulator-metal (MIM) devices. To reduce the leakage current while maintaining the mechanical stress during thermal annealing, a 10 nm Pt layer was inserted between the W/HZO bottom interface. This resulted in a ~ 20-fold decrease in the leakage current while the 2Pr value remained almost constant (~ 60 uC/cm2). The increase in barrier height at the Pt/HZO interface compared to that of the W/HZO interface coupled with the suppression of the formation of interfacial oxides (WOx) by the introduction of a Pt/HZO interface serves to decrease the leakage current.

Hafnium-doped Zirconia Ferroelectric Thin Films with Excellent Endurance at High Polarization.

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Ultralarge polarization in ferroelectric hafnia-based thin films

Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf 0.5 Zr 0.5 O 2 by Optimizing TiN x Interfacial Capping Layer and Its Fatigue Mechanism

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Ferroelectricity of Hf 0.5 Zr 0.5 O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Large remnant polarization in a wake-up free Hf0.5Zr0.5O2 ferroelectric film

Enhanced Ferroelectric Polarization with Less Wake-Up Effect and Improved Endurance of Hf0.5Zr0.5O2 Thin Films by Implementing W Electrode

Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Improving the ferroelectric properties of Lu doped Hf 0.5 Zr 0.5 O 2 thin films by capping a CeO x layer

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P$_r$ > 70$μ$C/cm$^2$) in Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films

Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films