Abstract:The limited availability of Te poses challenges for the widespread application of Bi2Te3-based thermoelectric modules. In this work, we explored the thermoelectric module potential of Te-free PbSe by elevating its power factor through crystal growth and slight-tuning vacancy and interstitial defects. The outcomes revealed a gradual increase in the carrier concentration and a high room-temperature carrier mobility of similar to 1750 cm(2) V-1 s(-1), leading to an enhanced power factor of similar to 37.4 mu W cm(-1) K-2 in Pb1.006Se+0.0016 Al crystals. We grew PbSe crystals to minimize the impact of grain boundaries on the charge carrier transport. Subsequently, n-type PbSe crystals were produced by introducing extra Pb to occupy the intrinsic Pb vacancies, effectively minimizing vacancy scattering. Following this, a minute quantity of small-sized Al (<= 2 parts per thousand) was introduced, revealing that these surplus Al atoms served as cationic dopants, substituting for Pb, while also occupying interstitial positions. The interstitial doping increases the carrier concentration while maintaining carrier mobility due to the distinct dimensions between the interstitial atoms and mean free path of electrons. The consistently improved power factor with the suppression of thermal conductivity brings about a significantly high ZT value over the whole temperature. Specifically, the ZT values of the Pb1.006Se+0.0016Al crystal reached similar to 0.5 at 300 K, similar to 1.5 at 673 K, and the average ZT (ZT(ave)) reached similar to 1.1 at 300-773 K. Ultimately, a single-leg power generation efficiency similar to 7.1% was achieved in Pb1.006Se+0.0016Al crystal and a 7-pair module reached a maximum temperature cooling difference similar to 51.2 K at the high temperature side T-h of 363 K. These results indicate the potential for developing a cost-effective and high-performance thermoelectric module utilizing PbSe.

Realizing High Conversion Efficiency in Shallow Cryogenic Thermoelectric Module Based on N-Type BiSb and P-Type MgAgSb Materials

Realization of high cryogenic thermoelectric performance for MgAgSb base alloy by regulation heat-treatment process

All‐Mg3Sb2‐Based Module for Thermoelectric Power Generation

Realizing High-Efficiency Thermoelectric Module by Suppressing Donor-Like Effect and Improving Preferred Orientation in N-Type Bi2(Te, Se)3

Design and Fabrication of Segmented GeTe/(Bi,Sb)2Te3 Thermoelectric Module with Enhanced Conversion Efficiency

Realizing an Excellent Conversion Efficiency of 14.5% in the Mg3Sb2/GeTe-based Thermoelectric Module for Waste Heat Recovery

Realizing High Energy Conversion Efficiency in a Novel Segmented‐Mg3(Sb, Bi)2/Cubic‐GeTe Thermoelectric Module for Power Generation

High Performance Dual-mode Module for Power Generation and Cooling Based on Optimized BiSbTe

High‐Efficiency Thermoelectric Module Based on High‐Performance Bi0.42Sb1.58Te3 Materials

Realizing Ultrahigh Conversion Efficiency of ≈9.0% in YbCd2Sb2/Mg3Sb2 Zintl Module for Thermoelectric Power Generation

Next-generation thermoelectric cooling modules based on high-performance Mg3(Bi,Sb)2 material

High efficiency GeTe-based materials and modules for thermoelectric power generation

Device‐Level Optimization of n‐Type Mg3(Sb, Bi)2‐Based Thermoelectric Modules toward Applications: A Perspective

Realizing a Superior Conversion Efficiency of ≈11.3% in the Group IV-VI Thermoelectric Module

Bi2Te3-Based Thermoelectric Modules for Efficient and Reliable Low-Grade Heat Recovery

Realizing an excellent conversion efficiency of 14.5% in the Mg 3 Sb 2 /GeTe-based thermoelectric module for waste heat recovery

Interfacial Design Contributing to High Conversion Efficiency in Mg3(Sb, Bi)2/Bi2Te3 Thermoelectric Module with Superior Stability

Realizing High-Performance Thermoelectric Modules Through Enhancing the Power Factor Via Optimizing the Carrier Mobility in N-Type PbSe Crystals

Interface and Surface Engineering Realized High Efficiency of 13% and Improved Thermal Stability in Mg3Sb1.5Bi0.5‐Based Thermoelectric Generation Devices

Realizing ultrahigh ZT value and efficiency of the Bi2Te3 thermoelectric module by periodic heating

Towards Tellurium-Free Thermoelectric Modules for Power Generation from Low-Grade Heat.