Abstract:The limited availability of Te poses challenges for the widespread application of Bi2Te3-based thermoelectric modules. In this work, we explored the thermoelectric module potential of Te-free PbSe by elevating its power factor through crystal growth and slight-tuning vacancy and interstitial defects. The outcomes revealed a gradual increase in the carrier concentration and a high room-temperature carrier mobility of similar to 1750 cm(2) V-1 s(-1), leading to an enhanced power factor of similar to 37.4 mu W cm(-1) K-2 in Pb1.006Se+0.0016 Al crystals. We grew PbSe crystals to minimize the impact of grain boundaries on the charge carrier transport. Subsequently, n-type PbSe crystals were produced by introducing extra Pb to occupy the intrinsic Pb vacancies, effectively minimizing vacancy scattering. Following this, a minute quantity of small-sized Al (<= 2 parts per thousand) was introduced, revealing that these surplus Al atoms served as cationic dopants, substituting for Pb, while also occupying interstitial positions. The interstitial doping increases the carrier concentration while maintaining carrier mobility due to the distinct dimensions between the interstitial atoms and mean free path of electrons. The consistently improved power factor with the suppression of thermal conductivity brings about a significantly high ZT value over the whole temperature. Specifically, the ZT values of the Pb1.006Se+0.0016Al crystal reached similar to 0.5 at 300 K, similar to 1.5 at 673 K, and the average ZT (ZT(ave)) reached similar to 1.1 at 300-773 K. Ultimately, a single-leg power generation efficiency similar to 7.1% was achieved in Pb1.006Se+0.0016Al crystal and a 7-pair module reached a maximum temperature cooling difference similar to 51.2 K at the high temperature side T-h of 363 K. These results indicate the potential for developing a cost-effective and high-performance thermoelectric module utilizing PbSe.

Realizing ultrahigh ZT value and efficiency of the Bi2Te3 thermoelectric module by periodic heating

High Thermoelectric Performance of a Sc2Si2Te6 Monolayer at Medium Temperatures: an Ab Initio Study.

High efficiency Bi2Te3-based materials and devices for thermoelectric power generation between 100 and 300 °C

High‐Efficiency Thermoelectric Module Based on High‐Performance Bi0.42Sb1.58Te3 Materials

Bi2Te3-Based Thermoelectric Modules for Efficient and Reliable Low-Grade Heat Recovery

High Efficiency Bi2te3-Based Materials and Devices for Thermoelectric Power Generation Between 100 and 300 Degrees C

Realizing High-Efficiency Thermoelectric Module by Suppressing Donor-Like Effect and Improving Preferred Orientation in N-Type Bi2(Te, Se)3

Bismuth Telluride/Half‐Heusler Segmented Thermoelectric Unicouple Modules Provide 12% Conversion Efficiency

High‐Performance Thermoelectric Material and Module Driven by Medium‐Entropy Engineering in SnTe

Realizing High-Performance Thermoelectric Modules Through Enhancing the Power Factor Via Optimizing the Carrier Mobility in N-Type PbSe Crystals

High‐Performance Industrial‐Grade p‐Type (Bi,Sb)2Te3 Thermoelectric Enabled by a Stepwise Optimization Strategy

All‐Mg3Sb2‐Based Module for Thermoelectric Power Generation

Realizing High Energy Conversion Efficiency in a Novel Segmented‐Mg3(Sb, Bi)2/Cubic‐GeTe Thermoelectric Module for Power Generation

Enhanced Thermoelectric Performance of P‐Type (Bi,Sb)2Te3 by Incorporating Non‐Stoichiometric Ag5Te3 and Refining Te‐Se Ratio

Half‐Heusler Thermoelectric Module with High Conversion Efficiency and High Power Density

Broadening the optimum thermoelectric power generation range of p-type sintered Bi0.4Sb1.6Te3 by suppressing bipolar effect

Design and Fabrication of Segmented GeTe/(Bi,Sb)2Te3 Thermoelectric Module with Enhanced Conversion Efficiency

Bismuth Telluride Based Efficient Thermoelectric Power Generator with Electrically Conducive Interfaces for Harvesting Low Temperature Heat

An over 10% module efficiency obtained using non-Bi 2 Te 3 thermoelectric materials for recovering heat of <600 K

Performance evolution of thermoelectric modules under constant heat flux

Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres