Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior

Jiawen You,Jie Pan,Shun-Li Shang,Xiang Xu,Zhenjing Liu,Jingwei Li,Hongwei Liu,Ting Kang,Mengyang Xu,Shaobo Li,Deqi Kong,Wenliang Wang,Zhaoli Gao,Xing Zhou,Tianyou Zhai,Zi-Kui Liu,Jang-Kyo Kim,Zhengtang Luo
DOI: https://doi.org/10.1021/acs.nanolett.2c04133
IF: 10.8
2022-01-01
Nano Letters
Abstract:Vanadium diselenide (VSe2) exhibits versatile electronic and magnetic properties in the trigonal prismatic (H-) and octahedral (T-) phases. Compared to the metallic T-phase, the H-phase with a tunable semiconductor property is predicted to be a ferrovalley material with spontaneous valley polarization. Herein we report an epitaxial growth of the monolayer 2D VSe2 on a mica substrate via the chemical vapor deposition (CVD) method by introducing salt in the precursor. Our first-principles calculations suggest that the monolayer H-phase VSe2 with a large lateral size is thermodynamically favorable. The honeycomb-like structure and the broken symmetry are directly observed by spherical aberration-corrected scanning transmission electron microscopy (STEM) and confirmed by giant second harmonic generation (SHG) intensity. The p-type transport behavior is further evidenced by the temperature-dependent resistance and field-effect device study. The present work introduces a new phase-stable 2D transition metal dichalcogenide, opening the prospect of novel electronic and spintronics device design.
What problem does this paper attempt to address?