Abstract:Layered transition-metal dichalcogenides (TMDs) constitute an emerging class of materials that provide researchers a platform to realize fundamental studies and to design promising optoelectronic devices. While defects are an almost unavoidable part of TMDs, they bring additional interesting properties absent in defect-free layers. Moreover, the controlled introduction of defects in TMDs makes it possible to tailor the electromagnetic properties of the materials. Here we report defect-induced properties of single-layer PdSe2 and demonstrate the emergence of magnetism at the nanoscale. Our first-principle calculations indicate that Se vacancies create in-gap defect states, which can be responsible for trapping of carriers. The complex square VPd+4Se vacancy induces spin-polarized states with a total local magnetic moment of 2μB per defect, making it possible to introduce magnetization into PdSe2 and therefore expand the family of two-dimensional (2D) magnets. The defect formation energies are much lower compared to many other TMD materials that can explain the presence of a large number of Se defects after mechanical exfoliation of PdSe2 layers, while the central location of the Pd atoms preserves them from exfoliation-induced defect formation. The negatively charged vacancies are prone to form and in many cases demonstrate spin-polarized states. The small diffusion barrier of VSe in 2D PdSe2 leads to an easy room-temperature migration, while VPd demonstrates a high diffusion barrier preventing its spontaneous migration. As a guide for experimentalists, we simulate and characterize scanning tunneling microscope images in valence and conduction states and estimate the electron-beam energy for a controllable production of various defect patterns. These intriguing findings make PdSe2 an ideal platform to study defect-induced phenomena.

Magnetic and transport properties of two-dimensional ferromagnet VSe 2 with Se vacancies

Effects of Vacancy Defects on the Magnetic Properties of Vanadium Diselenide Monolayers: a First Principle Investigation.

Thickness-dependent and strain-tunable magnetism in two-dimensional van der Waals VSe2

Spin transport properties of T-phase VSe2 2D materials based on eight-atom-ring line defects

Defect effects on the electronic, valley, and magnetic properties of two-dimensional ferrovalley material VSi2N4

A combined Quantum Monte Carlo and DFT study of the strain response and magnetic properties of two-dimensional (2D) 1T-VSe$_2$ with charge density wave

Spin-filter induced large magnetoresistance in 2D van der Waals magnetic tunnel junctions

Exchange interactions in 1T-VSe2 monolayer and their modulation by electron doping via alkali metal adsorption and electride substrate

Thickness-dependent Magnetotransport Properties in 1T VSe2 Single Crystals Prepared by Chemical Vapor Deposition

Magnetoresistance and Kondo Effect in Nodal-Line Semimetal VAs2 *

Modulation of electronic and magnetic properties of monolayer 1T-VSe2 by ferroelectric LiNbO3 (0001) surface

Room-temperature ferromagnetism in monolayer WSe2 semiconductor via vanadium dopant

Modulating the electronic, magnetic and optical properties of 1T-SnSe2 monolayer by defects: An ab initio study

Electronic structure and magnetic anisotropy response of Janus Monolayer VSeTe

Robust ferroelectric-gating-dependent electronic and magnetic properties in a 1T-VSe2/BiAlO3(0001) multiferroic heterostructure

Correlating structural, electronic, and magnetic properties of epitaxial V Se 2 thin films

Non-stoichiometry induced 2H-1T phase interfaces and room-temperature ferromagnetism in defective molybdenum selenide

Point and complex defects in monolayer Pd Se 2 : Evolution of electronic structure and emergence of magnetism

Ferromagnetism in Fe-doped Bi2Se3 Topological Insulators with Se Vacancies

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructure

Stress-driven structural and bond reconstruction in 2D ferromagnetic semiconductor VSe2