Abstract:In this study, a time fractional dual-phase-lag model with temperature jump boundary condition as a choice for the Fourier's law replacement in thermal modeling of transistors, is utilized. In more details, the numerical simulation of heat transfer in newly proposed TMTC field effect transistors using fractional DPL equation has been investigated. Moreover, the Caputo fractional derivative is employed to formulate the finite difference scheme for discretization of the fractional DPL model. In order to obtain more precise results for the peak temperature rise, the temperature and heat flux profiles, the size-dependent thermal properties are taken into account. Also, the temperature jump boundary condition has been also applied by means of a mixed-type boundary condition. It is obtained that considering size-dependent thermal characteristics for transistors under study, results in an increase of the peak temperature rise. As an instance, considering the film dependent thermal properties for a 1-D silicone MOSFET with uniform heat generation at the upper part, makes the maximum temperature increase up to 250%. Furthermore, considering constant bulk thermal properties for the silicon MOSFET, certain oscillations are observed in the time-variation of the peak temperature rise for α = 0.7, 0.9 and 1. This presents the so-called negative bias temperature instability appearing in electronic nano-semiconductor devices. Finally, the hotspot temperature has been researched in transistors containing two-dimensional materials with quasi one-dimensional band structure channels. It is obtained that among the studied FETs, titanium trisulfide with maximum temperature increase of 19.63 K exhibits the least peak temperature rise. This presents that TiS3 may be an acceptable silicon channel replacement as far as the thermal issues are concerned.

Investigation of the Temperature Dependence of Bulk-Si TFET and MFSB-TFET by TCAD Simulation

Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal–oxide–semiconductor field-effect transistors with tunnel diode body contact structures

Temperature Dependences of Threshold Voltage and Drain-Induced Barrier Lowering in 60nm Gate Length MOS Transistors

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Comprehensive Characterization of the 4H-Sic Planar and Trench Gate MOSFETs from Cryogenic to High Temperature

Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling

Fabrication and Characterization of a Novel Si Line Tunneling TFET with High Drive Current

Quantum Mechanical Effects On Characteristics Of Mosfet In Low Temperature Operation

Investigation of Analog/RF behaviour of Asymmetrical Gate Tunnel FET at Cryogenic temperatures

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Temperature Dependence of On-State Inter-Terminal Capacitances (Cgd and Cgs) of SiC MOSFETs and Frequency Limitations of their Measurements

Characterization of 4H-SiC Planar MOSFETs and Trench MOSFETs at Cryogenic and High Temperatures

The Low Threshold-Voltage Shift with Temperature and Small Subthreshold-Slope in 28 Nm UTBB FDSOI for 300 °C High-Temperature Application

A time-fractional dual-phase-lag framework to investigate transistors with TMTC channels (TiS3, In4Se3) and size-dependent properties

Investigation and Comparison of Temperature-Sensitive Electrical Parameters of SiC Mosfet at Extremely High Temperatures

High performance tunnel field-effect transistor by gate and source engineering.

Investigation of Electrical Characteristics on SiC MOSFET and JBS-Integrated MOSFET at Cryogenic Temperatures

A Universal Temperature-Dependent Carrier Backscattering Model for Low-Temperature High-Performance CMOS Applications

Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 Nm Si FinFET

GaSb P-Channel Metal-Oxide-semiconductor Field-Effect Transistor and Its Temperature Dependent Characteristics

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism