Abstract:Accurate measurements of the junction-to-case thermal resistances of power devices or module packages are necessary for validating the thermal design of the package as well as of the entire converter system. Although accurate measurements can be obtained for Si and SiC packages by the JESD51-14 standard, no standard has been established for gallium nitride (GaN) packages. A main reason for this shortcoming is the lack of accurate techniques for measuring the device's junction temperature. In this letter, a custom package of a (650 V, 150 A) eGaN high-electron mobility transistor with two gate pads was fabricated, and then its junction-to-case thermal resistance was measured by combining two techniques to improve the accuracy: using the device's gate-to-gate electrical resistance as the temperature-sensitive electrical parameter; and measuring the thermal resistance as a function of added layers of thermal interface materials. The first gives a sensitivity of 4.7 mC and is instantaneous and immune to any transient behavior of the device. The second eliminates the need for accurate measurement of the case temperature. The package's junction-to-case thermal resistance was determined by extrapolating the discrete thermal resistance data points in the plot to zero layer of thermal interface. An analytical expression was derived to guide the extrapolation and was validated by finite-element analysis simulations. The measurement procedure was tested using two different thermal interface materials. The difference between the two experimental measurements was within 24, and both are in good agreement with the simulated result.

Evaluation of the Square Root T Method in Junction Temperature Measurement of GaN HEMTs During Power Cycling Test

A Novel Method For On-Line Junction Temperature Measurement Of Power Modules

Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Transient Thermal Analysis of GaN Heterojunction Transistors (HFETs) for High-Power Applications

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

A Junction Temperature Monitoring Method for IGBT Modules Based on Turn-Off Voltage with Convolutional Neural Networks

Study on Thermal Transient Measurement Method and Mechanism of GaN HEMT Power Devices

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

High Speed Transient Thermal Simulation of GaN HEMT Devices

Steady-State Temperature-Sensitive Electrical Parameters' Characteristics of GaN HEMT Power Devices

Research on Transient Temperature Rise Measurement Method for Semiconductor Devices Based on Photothermal Reflection

Improved Measurement Accuracy for Junction-to-Case Thermal Resistance of GaN HEMT Packages by Gate-to-Gate Electrical Resistance and Stacking Thermal Interface Materials

Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

Online Junction Temperature Extraction with Gate Voltage under Nontrigger Current for High-Voltage Thyristor

Methods for virtual junction temperature measurement respecting internal semiconductor processes

Study of Thermal Simulation Technology for GaN Power Devices

Measurement of Piezoresistance Coefficient Based on GaN HEMT Micro-Accelerometers

Igbt Junction Temperature Measurement Via Combined Tseps with Collector Current Impact Elimination

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit