Abstract:The thermal characterization of power devices is an inevitable task in the industry. Thermal transient testing is one of the major tools for this characterization, as it is not only capable of giving information about the actual thermal parameters but may also reveal the root cause of potential device failures. The testing may occur on single packages or modules on a dedicated standard test bench, or "in situ", in an actual assembly. The testing process itself is very fast in both cases, on the order of seconds, but the transient measurement needs to be preceded by a calibration step to determine the temperature dependence of a temperature-sensitive parameter (TSP) of the semiconductor device. This may require a long time, as the device has to be measured at many stabilized temperatures, which in the case of power devices may take hours. It also has to be considered that, especially in "in situ" measurements, reaching the highest device temperatures of power devices may even damage other parts of the surrounding electronics. Moreover, the temperature distribution inside a module will be different at calibration time than during operation with the same junction temperature, as bond wires and copper traces do not reach the chip temperature in the latter case. This paper presents a methodology that can be used to replace the lengthy measurement of one parameter at many temperatures with a fast single I–V characteristics measurement at room temperature. Physics-based calculations assign a unique temperature-sensitive parameter to each item of interest in the system. After the presentation of the theoretical background, the usability of the method is demonstrated by verifying measurements on silicon power devices.

Methods for virtual junction temperature measurement respecting internal semiconductor processes

A Novel Method For On-Line Junction Temperature Measurement Of Power Modules

A Simplification Method for Power Device Thermal Modeling with Quantitative Error Analysis

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

Online Junction Temperature Measurement of Power Semiconductor Devices

Igbt Junction Temperature Measurement Via Combined Tseps with Collector Current Impact Elimination

A Novel On-line IGBT Junction Temperature Measurement Method Based on On-state Voltage Drop

Analytical Prediction of the Thermal Behavior of Semiconductor Power Devices from Room-Temperature I–V Measurements

Evaluation of the Square Root T Method in Junction Temperature Measurement of GaN HEMTs During Power Cycling Test

A Novel Junction Temperature Estimation Approach for High Voltage IGBT Modules Based on Pre-Turn-Off Current

Online Junction Temperature Extraction with Gate Voltage under Nontrigger Current for High-Voltage Thyristor

Measurement of IGBT Junction Temperature in DC Circuit Breakers Based on Saturation Voltage Drop

A Junction Temperature Monitoring Method for IGBT Modules Based on Turn-Off Voltage with Convolutional Neural Networks

Junction Temperature Control for More Reliable Power Electronics

Online Junction Temperature Measurement for SiC MOSFET Based on Dynamic Threshold Voltage Extraction

A Novel In Situ Igbt And Fwd Junction Temperature Estimation Technique For Igbt Module Based On On-State Voltage Drop Measurement

Accuracy estimation of low-current voltage drop method for junction temperature monitoring under DC power cycling

Real-time measurement and control of junction temperature of VDMOS in power cycle test

Junction Temperature Analysis of IGBT Devices

Junction temperature monitoring of silicon carbide MOSFET based on turn‐off voltage spike

Junction temperature measurement method for IGBTs using turn-on miller plateau duration