Abstract:Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been employed to study defect production, clustering and their evolution within high energy displacement cascades in semiconductors. Based on the MD results, the damage density within a cascade core is evaluated, and used to describe a new energy partition function. In addition, we have further developed a model to determine the non-ionizing energy loss (NIEL) for semiconductors, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The atomic-level based NIEL model has been applied to GaAs and GaN. At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters in GaAs, but a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies higher than 2 keV. However, a large number of atoms will be displaced during the collisional phase with a compacted cascade volume in GaN, and consequently, a great number of displaced atoms recombine significantly with vacancies at the same time, i.e., a pseudo-metallic behavior (PMB). This leads to the result that the majority of surviving defects are just single interstitials or vacancies for all recoil energies considered with only a small number of defects forming clusters. The total number of defects simulated in GaN can be very well predicted by the simplied Norgett, Robison and Torrens (NRT) formula due to the PMB, in contrast to GaAs where the defect number becomes much larger than the NRT value. The calculated NIEL in GaN is often found smaller than that predicted by a model based on the simple Kinchin-Pease formula. The comparisons of defect creation, density and effective NIEL in GaN to those of GaAs suggest that GaN may be much more resistant to displacement damage than GaAs, and therefore, very suitable for use in high-power space-energy systems and space-probe applications.

Theoretical Simulation and Experimental Verification of the Competition Between Different Recombination Channels in GaN Semiconductors

Theoretical Simulation and Experimental Verification of the Competition between Different Recombination Channels in GaN Semiconductor

Interband Transition Physics from the Absorption Edge in GaN: New Prospects from Numerical Analysis

First‐Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: the Example of Yellow Luminance by GaN: CN+ON and GaN:CN

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multi-quantum-well structures

Non-exponential Photoluminescence Decay Dynamics of Localized Carriers in Disordered InGaN/GaN Quantum Wells: the Role of Localization Length

Experimental Measurement of Depletion Region Distribution in Gan Hemts with Channel-Probe Branch

Reliability Research of GaN-Based blue Semiconductor Lasers

Total-InGaN-thickness Dependent Shockley-Read-Hall Recombination Lifetime in InGaN Quantum Wells

Simulation study on the diversity and characteristics of twin structures in GaN

Atomic-level based non-ionizing energy loss: an application to GaAs and GaN semiconductor materials

Carbon and Silicon Impurity Defects in GaN: Simulating Single-Photon Emitters by First Principles

Room-Temperature Bound Exciton with Long Lifetime in Monolayer GaN

Space and Time Resolved Investigation of Recombination X-Ray Lasers

Simulated Research on Displacement Damage of Gallium Nitride Radiated by Different Neutron Sources

Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

Investigation on the mechanism of carrier recombination in the GaN-based blue laser diode before lasing

Consistency on Two Kinds of Localized Centers Examined from Temperature-Dependent and Time-Resolved Photoluminescence in InGaN/GaN Multiple Quantum Wells

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

On the Nature of Radiative Recombination in GaAsN