Abstract:High-performance ZnO thin-film transistors (TFTs) have been successfully fabricated by atomic layer deposition (ALD) with a maximum temperature of 200 °C. The impacts of deposition and annealing temperature on the characteristics of devices were discussed. ZnO thin films show a (002) preferred orientation at the high growth temperature. The carrier concentrations of ZnO TFTs can be optimized by appropriate growth temperature and annealing treatments. Subthreshold swing (SS) and hysteresis windows of TFTs are improved after annealing in dry O<sub>2</sub> due to the reduction in traps at ZnO/SiO<sub>2</sub> interface or/and within the ZnO channel. The ZnO TFT deposited at 150 °C with 200 °C annealing in oxygen demonstrates excellent electrical characteristics with high saturation mobility <inline-formula> <tex-math notation="LaTeX">$\mu _{\text {sat}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$7.8 {\mathrm {cm}}^{\text {2}}\text{V}^{-\text {1}}\text{s}^{-\text {1}}$ </tex-math></inline-formula>, small SS of 127 mV/decade, high <inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$2.8 \times 10^{\text {9}}$ </tex-math></inline-formula>, and good contact between source/drain electrodes. The high-performance ZnO TFTs with low processing temperatures have great potential in application for flexible electronics.

Field-Effect Mobility Enhancement in Low Temperature ALD ZnO Thin-film Transistors Via Contact Defects Engineering Suitable for BEOL Integration

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Atomic Layer Deposition of Al-Doped ZnO Contacts for ZnO Thin-Film Transistors

High-performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition at Low Temperature

Air Stable High Mobility ALD ZnO TFT with HfO<sub>2</sub> Passivation Layer Suitable for CMOS-BEOL Integration

Performance Optimization of Atomic Layer Deposited ZnO Thin-Film Transistors by Vacuum Annealing

Air Stable High Mobility ALD ZnO TFT with HfO<inf>2</inf> Passivation Layer Suitable for CMOS-BEOL Integration

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

Enhanced Performance of ZnO Thin-Film Transistors with ZnO Dual-Active-layer

Enhanced Performance of Atomic Layer Deposited Thin-Film Transistors with High-Quality ZnO/Al 2 O 3 Interface

A Low-Leakage Zinc Oxide Transistor by Atomic Layer Deposition

Stability Enhancement of Low Temperature Thin-Film Transistors with Atomic-Layer-Deposited Zno:Al Channels

Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors with SiAlOX Dielectric

Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization

Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition