Abstract:Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian. The electron-hole exchange interaction Hamiltonian, which consists of the long- and short-range parts, is derived within the effective-mass approximation by taking into account the conduction, heavy- and light-hole bands, and especially the split-off band. The scheme applied in this work allows the description of excitons in both the strong and weak confinement regimes. The importance of treating the direct electron-hole Coulomb interaction unperturbatively is demonstrated. We show in our calculation that the light-hole and split-off bands are negligible when considering the exciton fine structure, even for GaN quantum dots, and the short-range exchange interaction is irrelevant when considering the optically active doublet splitting. We point out that the long-range exchange interaction, which is neglected in many previous works, contributes to the energy splitting between the bright and dark states, together with the short-range exchange interaction. Strong dependence of the optically active doublet splitting on the anisotropy of dot shape is reported. Large doublet splittings up to 600 $\mu$eV, and even up to several meV for small dot size with large anisotropy, is shown in GaN quantum dots. The spin relaxation between the lowest two optically active exciton states in GaN quantum dots is calculated, showing a strong dependence on the dot anisotropy. Long exciton spin relaxation time is reported in GaN quantum dots. These findings are in good agreement with the experimental results.

GaAs Quantum Dots under Quasi-Uniaxial Stress: Experiment and Theory

Tuning Quantum Dot States with Optical Fields

Exciton polarization, fine-structure splitting, and the asymmetry of quantum dots under uniaxial stress.

Exciton polarization, fine structure splitting and quantum dot asymmetry under uniaxial stress

Theory of strain tunning exction coupling in self-assembled InAs/GaAs quantum dots

Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots

Theory of Excitons in Cubic III-V Semiconductor GaAs, InAs and GaN Quantum Dots: Fine Structure and Spin Relaxation

Exciton states in strained GaN/AlxGa1-xN quantum dots

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Theoretical Study of Quantum Confined Stark Shift in Inas/Gaas Quantum Dots

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots

The Effects of A Stress Field and Chemical Diffusion on Electronic Behaviour in Inas/Gaas Quantum Dots

Effects Of Internal Strain And External Pressure On Electronic Structures And Optical Transitions Of Self-Assembled Inxga1-Xas/Gaas Quantum Dots: An Experimental And Theoretical Study

Large and uniform optical emission shifts in quantum dots externally strained along their growth axis

Influences of Strain on Binding Energies of Excitons in InAs/GaAs Quantum Dot Molecules

Exciton Fine-Structure Splitting Of Telecom-Wavelength Single Quantum Dots: Statistics And External Strain Tuning

Effective-mass Theory for InAs/GaAs Strained Coupled Quantum Dots.

The influence of surface stress on the equilibrium shape of strained quantum dots

Microscopic Approach to Many-Exciton Complexes in Self-Assembled InGaAs/GaAs Quantum Dots

GaAs Cone-Shell Quantum Dots in a Lateral Electric Field: Exciton Stark-Shift, Lifetime, and Fine-Structure Splitting

Dot-Size Dependent Excitons in Droplet-Etched Cone-Shell GaAs Quantum Dots