Abstract:A recent experiment on Stark effect spectroscopy in self-assembled quantum dots (SADs) has demonstrated the existence of an inverted electron-hole alignment due to the presence of gallium diffusion in InAs SADs and has established a relation between the Stark shift and the vertical electron-hole separation. The theoretical interpretation of these experimental results is based on the assumption that the applied electric field can be treated by the second-order perturbation theory, which results in a quadratical dependence of the transition energy on the applied electric field. While this relation is well satisfied in many quantum systems including single SADs and quantum well structures. But this relation is not valid for vertically coupled SAD structures, the asymmetric Stark shift of experimental measurement has shown existence of built-in dipole moment in InAs/GaAs QDs. Here we present a theoretical investigation of the factors influencing the sign and magnitude of the built-in dipole moment in realistic QD structures, including cubical, pyramidal and truncated pyramidal shape. The comparable results gave a reasonable interpretation for the experimental results.Our calculations consist of two basic steps. First, the strain is calculated for particular dot geometry with Green function methods. Second, the single-electron states are calculated using an electronic Hamiltonian, which depends on the strain. The computed states can then be used to determine various quantities, such as optical transition strengths, or exciton binding energies. In the article, we use Green function for the strain calculation, and plane-waves expansion. in the envelope function approximation for the electronic structure calculations. The theoretical results agree well with the available experimental data. Our calculated results are useful for the application of QDs to photoelectric devices.

Theoretical Study of Quantum Confined Stark Shift in Inas/Gaas Quantum Dots

Theoretical Calculation of Quantum-Confined Stark Effect in InAs/GaAs Self-Assembled Quantum Dots

2D–3D transitions in the quantum Stark effect in self-assembled InAs/GaAs quantum dots

Asymmetric Stark shifts of exciton in InAsGaAs pyramidal quantum dots

Anomalous Quantum-Confined Stark Effects in Stacked InAs/GaAs Self-Assembled Quantum Dots.

Anomalous Quantum-Confined Stark Effects in StackedInAs/GaAsSelf-Assembled Quantum Dots

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Anomalous Quantum Confined Stark Effects In Vertically Coupled Inas/Gaas Self-Assembled Quantum Dots

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

The Strain Distributions and Carrier'S Confining Potentials of Self-Organized Inas/Gaas Quantum Dot

Electronic Structure of Quantum Dots in (111) Direction

Strain Distribution and Electronic Structure of Self-Organized Inas/Gaas Quantum Dots

Electron and hole energy levels in InAs/GaAs quantum dots: Size and magnetic field effects

Strain Distribution And Electronic Spectra Of Inas/Gaas Self-Assembled Dots: An Eight-Band Study

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Electric field induced tuning of electronic correlation in weakly confining quantum dots

Electronic Propertiesof InAs/GaAs Self‐assembled Quantum Dots: Beyond the Effective Mass Approximation

Absence of Correlation Between Built-in Electric Dipole Moment and Quantum Stark Effect in Single InAs/GaAs Self-Assembled Quantum Dots

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

Investigation of the dependence of volume, cap layer and aspect ratio on the strain distribution and electronic structure of self-organized InAs/GaAs quantum dot

Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots