Abstract:We report a method for improving the electrical performance of Pt/ $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ Schottky barrier diodes (SBDs) through surface pretreatment using low-temperature O $_{\text{2}}$ gas annealing. We found that subjecting the $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ surface to 5 min of O $_{\text{2}}$ gas pretreatment at 400 $^{\circ}$ C before anode metal deposition resulted in an 18% increase in breakdown voltage ( $\textit{V}_{\text{br}}\text{)}$ and a 42% improvement in power figure-of-merit (PFOM) compared to control devices. X-ray photoelectron spectroscopy (XPS) analysis revealed that the O $_{\text{2}}$ gas pretreatment caused the oxidation of the Ga $^{\text{2}+}$ states on the surface, which increased the Schottky barrier height ( $\textit{q}\phi _{\text{b}}\text{)}$ and improved the ideality factor of the SBDs. However, when the pretreatment time was extended to 15 min, we observed the evidence of the reduction process of the oxidized Ga $^{\text{2}+}$ , which resulted in a degraded $\textit{V}_{\text{br}}$ and a reduced $\textit{q}\phi _{\text{b}}$ of the SBDs. Overall, our findings suggest that low-temperature O $_{\text{2}}$ gas annealing is a promising approach for engineering the Schottky interface of $\beta$ -Ga $_{\text{2}}$ O $_{\text{3}}$ SBDs and improving their performance.

Low Specific On-Resistance and Low Leakage Current Β-Ga2o3 (001) Schottky Barrier Diode Through Contact Pre-Treatment

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

70-Μm-body Ga2O3 Schottky Barrier Diode with 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency

2.5kV/3.78mΩ·cm 2 Low Forward Voltage Vertical β-Ga 2 O 3 Schottky Rectifier with Field Plate assisted Deep Mesa Termination

2.7 Kv Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

8.7 A/700 V Β-Ga2o3 Schottky Barrier Diode Demonstrated by Oxygen Annealing Combined with Self-Aligned Mesa Termination

Vertical Β-Ga₂o₃ Schottky Barrier Diodes with Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

2.5Kv/3.78mω⋅cm² Low Forward Voltage Vertical Β-Ga₂o₃ Schottky Rectifier with Field Plate Assisted Deep Mesa Termination

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Surface Pretreatment by Low-Temperature O$_{\text{2}}$ Gas Annealing for Performance Improvement in Pt/$\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Schottky Barrier Diodes

8.7 A/700 V β-Ga 2 O 3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

Research on the β-Ga2O3 Schottky barrier diodes with oxygen-containing plasma treatment

Vertical Β-Ga2o3 Schottky Barrier Diode with the Composite Termination Structure

Leakage Reduction of Quasi-Vertical GaN Schottky Barrier Diode with Post Oxygen Plasma Treatment

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

The role of surface pretreatment by low temperature O 2 gas annealing for β -Ga 2 O 3 Schottky barrier diodes

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally-Oxidized Termination