Abstract:ScAlN, with its ultra-wide band gap and ferroelectric properties, offers promising enhancements for GaN-HEMTs expanding the device-application space. In this work, we report the DC/RF characteristics of lattice-matched Sc 0.18 Al 0.82 N/GaN-HEMT (SG-HEMT) built on SiC wafer. The SG-HEMT features a graded AlGaN back-barrier (g-AlGaN BB) that enhances the conduction-band (CB) disruption at the AlGaN/GaN interface, improving charge confinement. We examine the impact of Sc 0.18 Al 0.82 N barrier thickness ( T B ) and gate-recess height ( T R ) on device performance. As the gate-to-channel distance decreases, transconductance ( G M ) increases due to enhanced gate control, and the threshold voltage (V TH ) shifts positively, exhibiting immunity to short-channel effects (SCEs) while preserving a better aspect ratio. Then the scaling behavior of SG-HEMT is explored with different gate lengths ( L G ). Besides, the impact of L SD scaling was studied through comprehensive simulations, and the device-performance metrics were thoroughly analyzed. The findings reveal that a 40 nm L G device achieves the highest G M of 423.8 mS/mm, an I D_peak of 2.58 A/mm, and a peak f T of 239.2 GHz, attributable to the higher polarization of ScAlN and impeded parasitic channel development as an outcome of the g-AlgaN BB, suggesting that lateral scaling is a viable method for enhancing device performance. This work manifests that high current densities can be achieved owing to a high sheet charge density at Sc 0.18 Al 0.82 N/GaN interface, highlighting the significant potential of SG-HEMTs for enhancing output power at the device level in millimeter-wave (mmw) frequencies and propelling HEMT functionalities.

Linearity Enhancement of AlGaN/GaN HEMTs with Selective-Area Charge Implantation

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

RF Linearity and Improved Transconductance of ScAlN/GaN HEMT with Novel Inverse L-shaped Gate Structure

Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages

The improvement of device linearity in AlGaN/GaN HEMTs at millimeter-wave frequencies using dual-gate configuration

High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

AlN/GaN/InGaN Coupling-Channel HEMTs for Improved g m and Gain Linearity

Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs with Enhanced Linearity

Al/sub 0.3/ga/sub 0.7/n/gan Composite-Channel HEMTs with Enhanced Linearity

Study of GaN/AlGaN Air Structure Gate HEMTs with High Linearity for RF Applications

Optimization of linearity at high electrical field for dual threshold coupling AlGaN/GaN HEMT applied in Ka-band applications

High-Efficiency AlGaN/GaN/Graded-AlGaN/GaN Double-Channel HEMTs for Sub-6G Power Amplifier Applications

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

A computational approach to optimize the linearity in dual-gate InAlGaN/AlN/GaN HEMTs

Highly Linear Al/sub 0.3/ga/sub 0.7/N-Al/sub 0.05/ga/sub 0.95/N-Gan Composite-Channel HEMTs

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

Double-Channel High-Electron-Mobility Transistor for Linearity Enhancement in RF/Microwave Applications

RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Nanoscale recessed T-gated ScAlN/GaN-HEMT on SiC wafer with graded back-barrier and Fe-doped buffer for future RF power amplifiers: a simulation study