Highly Linear Al/sub 0.3/ga/sub 0.7/N-Al/sub 0.05/ga/sub 0.95/N-Gan Composite-Channel HEMTs

J Liu,YG Zhou,RM Chu,Y Cai,KJ Chen,KM Lau

DOI: https://doi.org/10.1109/led.2005.843218

IF: 4.8157

2005-01-01

IEEE Electron Device Letters

Abstract:We report an Al0.3Ga0.7N-Al0.05Ga0.95N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5 % Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 x 100 mum HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f(T)) of 12 GHz and a peak power gain cutoff frequency (f(max)) of 30 GM. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45 % are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.