Abstract:In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula>) and excellent saturation drain current. Benefiting from the optimized material growth of high-resistivity buffer, effective Al2O3 surface passivation with suppressed OFF-state leakage current, and proper management of the electric field on the p-GaN gate edge, the device with a gate–drain distance of <inline-formula> <tex-math notation="LaTeX">$18.5~\mu \text{m}$ </tex-math></inline-formula> exhibits a <inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula> of 1344 V at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$1~\mu \text{A}$ </tex-math></inline-formula>/mm with grounded substrates, the highest among all the reported normally-OFF GaN-on-Si transistors. Well-restored high-density 2-D electron gas and efficient gate modulation enable the device with a high <inline-formula> <tex-math notation="LaTeX">${I}_{DS,max}$ </tex-math></inline-formula> of 450 mA/mm and a low specific ON-resistance of 3.92 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm2. Moreover, a large threshold voltage of 1.6 V (at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{A}$ </tex-math></inline-formula>/mm) and a steep subthreshold slope of 66 mV/dec have been achieved, with negligible threshold voltage shift upon long-term forward gate stress at 150 °C. These results illustrate the great potential of p-GaN gate HEMTs on Si for beyond 600-V applications.

Algan/Gan Hemts On Si By Mbe With Regrown Contacts And F(T)=153 Ghz

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance

Low Contact Resistance CMOS-Compatible RF GaN-on-Silicon HEMTs

Scaled InAlN/GaN HEMT on Sapphire With f T /f max of 190/301 GHz

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD

T-Gate shaped AlN/β-Ga2O3 HEMT for RF and High Power Nanoelectronics

High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures

Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

Fabrication of AlGaN/GaN High-Electron-mobility Transistors