Abstract:Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi$_2$, CoSi$_2$, NiSi and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no difference in the thermal interface conductance of epitaxial and non-epitaxial silicide/silicon interfaces. The effect of substrate carrier concentration is also investigated over a wide range of p- and n-type doping, and is found to be independent of carrier concentration, regardless of whether the interface is epitaxial and regardless of silicide type. In the case of epitaxial CoSi$_2$, a comparison of temperature dependant experimental data is made with two detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. At temperatures above 100K, the AGF approach greatly underpredicts the CoSi$_2$ data, while the DMM prediction matches the data well. The full-dispersion DMM is also found to closely predict the experimentally observed temperature-dependent interface conductance for epitaxial NiSi/Si and non-epitaxial TiSi$_2$/Si interfaces. In the case of epitaxial PtSi/Si interfaces, full dispersion DMM significantly overpredicts the experimental data.

Experimental Evidence of Superdiffusive Thermal Transport in Si0.4Ge0.6 Thin Films.

Thermal Transport In Molecular Beam Epitaxy Grown Si1-Xgex Alloy Films With A Full Spectrum Of Composition (X=0-1)

Thermal Transport in Crystalline Si/Ge Nano-Composites: Atomistic Simulations and Microscopic Models

Electronic and thermoelectric properties of atomically thin C<sub>3</sub>Si<sub>3</sub>/C and C<sub>3</sub>Ge<sub>3</sub>/C superlattices.

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Superdiffusive heat conduction in semiconductor alloys -- I. Theoretical foundations

Molecular Dynamics Computation of Thermal Properties in Si/Ge Nanocomposites

Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

Thermal Transport in Si/Ge Nanocomposites

Dimensionality and heat transport in Si-Ge superlattices

Thermal conductivity measurement of amorphous Si/SiGe multilayer films by 3 omega method

Thermal Transport Across Metal Silicide-Silicon Interfaces: An Experimental Comparison between Epitaxial and Non-epitaxial Interfaces

Nanoscale laser flash measurements of diffuson transport in amorphous Ge and Si

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

The Out-of-plane Thermal Conductivity of Si/Ge Superlattice Based On the Serious Model

Enhancing the Coherent Phonon Transport in SiGe Nanowires with Dense Si/Ge Interfaces

Thermal Conductivity Measurements of Ultra-Thin Single Crystal Silicon Films Using Improved Structure

Effect of electron-phonon interaction on lattice thermal conductivity of SiGe alloys

Mechanical and Lattice Thermal Properties of Si-Ge Lateral Heterostructures

Theoretical Study of Thermal Diffusivity of Superlattices in Measurements Using ?mirage? Technique

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography