Abstract:To extend the Moore's law in 5 nm node, a large number of two dimensional (2D) materials and devices have been researched, among which the 'cold' metals 2H MS 2 (M = Nb, Ta) with unique band structures are expected to achieve the sub-60 mVdec −1 subthreshold swing (SS). We explored the electronic properties and ballistic quantum transport performance of 'cold' metals and the corresponding MOSFETs with idealized structures. The studied 'cold' metal field-effect transistors (CM-FETs) based on the 'cold' metals are capable to fulfill the high-performance (HP) and low-dissipation (LP) goals simultaneously, as required by the International Technology Roadmap for Semiconductors (ITRS). Moreover, gaps of 'cold' metals CM-FETs also demonstrate negative differential resistance (NDR) property, allowing us to further extend the use of CM-FETs. Owing to the wide transmission path in the broken gap structure of NbS 2 /MoS 2 heterojunction, the 4110 μAμm −1 peak current, several orders of magnitude higher than the typical tunneling diode, is achieved by NbS 2 /MoS 2 CM-FET. The largest peak-valley ratio (PVR) 1.1×10 6 is obtained by TaS 2 /MoS 2 CM-FET with V GS = −1 V at room temperature. Our results claim that the superior on-state current, SS, cut-off frequency and NDR effect can be obtained by CM-FETs simultaneously. The study of CM-FETs provides a practicable solution for state-of-the-art logic device in sub 5 nm node for both more Moore roadmap and more than Moore roadmap applications.

Low-power Double-Gate MoS2 Negative Capacitance Transistors with Near-Zero DIBL

Negative-Capacitance FET With a Cold Source

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

Design of Negative Capacitance Tunneling Field Effect Transistor with Dual-Source U-shape Channel, Super-Steep Subthreshold Swing and Large On-State Current

Ultrafast Negative Capacitance Transition for 2D Ferroelectric MoS2/Graphene Transistor

An all two-dimensional vertical heterostructure graphene/CuInP 2 S 6 /MoS 2 for negative capacitance field effect transistor

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Effectively Suppressed Short-Channel Effects in Small-Size MoS2 Transistors by Introducing Negative-Capacitance Effect Resulted From Ferroelectric HfZrO2 Film

Compact Modeling of Short-Channel Effects in Back-Gated 2D Negative Capacitance (NC) FETs

Van der Waals negative capacitance transistors

An All Two-Dimensional Vertical Heterostructure Graphene/cuinp2s6/mos2 for Negative Capacitance Field Effect Transistor

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors

Exploration of Negative Capacitance in Multi-Gate Junctionless Transistor

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Simulation-Based Study of Negative Capacitance Double-Gate Junctionless Transistors with Ferroelectric Gate Dielectric

Steep-Slope and Hysteresis-Free MoS2 Negative-Capacitance Transistors Using Single HfZrAlO Layer As Gate Dielectric.

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact