Hole Transport Free Carbon-Based High Thermal Stability CsPbI1.2Br1.8 Solar Cells with an Amorphous InGaZnO4 Electron Transport Layer.

Cong Zhang,Xingtian Yin,Yuxiao Guo,Haixia Xie,Dan Liu,Wenxiu Que
DOI: https://doi.org/10.1039/d2cp02201j
IF: 3.3
2022-01-01
Physical Chemistry Chemical Physics
Abstract:Due to their low cost, tunable band gap and excellent thermostability, all-inorganic halide perovskites CsPbX3 (X = Br, I) have become a kind of promising photovoltaic material. However, compared to the organic-inorganic hybrid perovskite solar cells, the performance of CsPbX3 solar cells still needs to be improved. In this work, for the first time, we applied the sol-gel derived amorphous InGaZnO4 film as electron transport layers (ETLs) in CsPbX3-based devices. In these devices, the carbon electrode deposited by screen printing replaced the unstable hole transport layer and the expensive metal electrode to obtain hole transport free carbon-based devices, which significantly simplifies the preparation process and reduces the production cost. With the application of amorphous InGaZnO4 films, devices show a relatively high power conversion efficiency (9.07%) and excellent thermal stability. Compared with the reported CsPbX3 devices using SnO2 or TiO2 ETLs, the performance of amorphous InGaZnO4 based devices has been significantly improved. This work provides a promising route to prepare highly thermally stable all-inorganic perovskite solar cells using a-IGZO films.
What problem does this paper attempt to address?