Calculation model for thermal-caused passive intermodulation product of microstrip lines
HE Yun,WANG Qi,HU Tiancun,WANG Xinbo,LI Jun,CUI Wanzhao,LIU Chunliang
DOI: https://doi.org/10.3969/j.issn.1001-2400.2017.03.021
2017-01-01
Abstract:Aiming at the dielectric materials selection in design of microstrip lines with low passive intermodulation product,a new calculation model for passive intermodulation product is presented.The boundary condition varying with time periodically and one-dimension heat conduction equation are utilized to investigate the effect of the RF current density on the temperature of the strip in the model.The relationship between current density of the third order intermodulation product and RF current density,thermal parameters of dielectric substrate,length and beat frequency of carriers is obtained,by analyzing the interaction between conductance modulated by temperature and the electric field of carriers.The power of the third order passive intermodulation product of three kinds of microstrip lines are calculated,with the results indicating that the RF current density is the key factor affecting the passive intermodulation product.The effect of the width of the conduct strip,thermal parameters of the dielectric substrate,length and beat frequency of carriers on the third order intermodulation product can be obtained with the help of the model,which is useful for the design of microstrip lines with low passive intermodulation.