Controllable Doping in 2D Layered Materials
Zhen Wang,Hui Xia,Peng Wang,Xiaohao Zhou,Chunsen Liu,Qinghua Zhang,Fang Wang,Menglin Huang,Shiyou Chen,Peisong Wu,Yunfeng Chen,Jiafu Ye,Shenyang Huang,Hugen Yan,Lin Gu,Jinshui Miao,Tianxin Li,Xiaoshuang Chen,Wei Lu,Peng Zhou,Weida Hu
DOI: https://doi.org/10.1002/adma.202104942
IF: 29.4
2021-09-27
Advanced Materials
Abstract:For each generation of semiconductors, the issue of doping techniques is always placed at the top of the priority list since it determines whether a material can be used in the electronic and optoelectronic industry or not. When it comes to 2D materials, significant challenges have been found in controllably doping 2D semiconductors into p- or n-type, let alone developing a continuous control of this process. Here, a unique self-modulated doping characteristic in 2D layered materials such as PtSSe, PtS0.8Se1.2, PdSe2, and WSe2 is reported. The varying number of vertically stacked-monolayers is the critical factor for controllably tuning the same material from p-type to intrinsic, and to n-type doping. Importantly, it is found that the thickness-induced lattice deformation makes defects in PtSSe transit from Pt vacancies to anion vacancies based on dynamic and thermodynamic analyses, which leads to p- and n-type conductance, respectively. By thickness-modulated doping, WSe2 diode exhibits a high rectification ratio of 4400 and a large open-circuit voltage of 0.38 V. Meanwhile, the PtSSe detector overcomes the shortcoming of large dark-current in narrow-bandgap optoelectronic devices. All these findings provide a brand-new perspective for fundamental scientific studies and applications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology