Abstract:Elemental doping confined in atomically-thin 2D semiconductors offers a compelling strategy for constructing high performance photocatalysts. Although impressive progress has been achieved based on co-thermolysis method, the choices of dopants as well as semiconductor hosts are still quite limited to yield the elaborate photocatalyst with atomic-layer-confined doping defects, owing to the difficulty in balancing the reaction kinetics of different precursors. This study shows that the cation exchange reaction, which is dictated by the Pearson's hard and soft acids and bases (HSAB) theory and allowed to proceed at mild temperatures, can be developed into a conceptually new protocol for engineering elemental doping confined in semiconductor atomic layers. To this aim, the two atomic layers of a new type of 2D photocatalyst PdSeO3 (PdSeO3 2ALs, 1.1 nm) are created by liquid exfoliation and exploited as a proof-of-concept prototype. It is demonstrated that the Mn(II) dopants with controlled concentrations can be incorporated into PdSeO3 2ALs via topological Mn2+-for-Pd2+ cation exchange performed in water/isopropanol solution at 30 °C. The resulting Mn-doped PdSeO3 2ALs present enhanced capacity for driving photocatalytic oxidation reactions in comparison with their undoped counterparts. The findings here suggest that the new route mediated by post synthetic cation exchange promises to give access to manifold 2D confined-doping photocatalysts, with little perturbations on the thickness, morphology, and crystal structure of the atomically-thin semiconductor hosts.

Doping Elemental 2D Semiconductor Te through Surface Se Substitutions

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Surface charge transfer doping for two-dimensional semiconductor-based electronic and optoelectronic devices

Controllable Doping in 2D Layered Materials

Versatile Post-Doping toward Two-Dimensional Semiconductors

Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon.

Controlled Doping Engineering in 2D MoS2 Crystals Toward Performance Augmentation of Optoelectronic Devices.

Selenium / Tellurium Two-Dimensional Structures: from Isovalent Se Dopants in Te to Atomically Thin Se Films

Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications

Substitutional Doping: In Situ Oxygen Doping of Monolayer MoS 2 for Novel Electronics (Small 42/2020)

Dimensionality-Inhibited Chemical Doping in Two-Dimensional Semiconductors: the Phosphorene and MoS2 from Charge-Correction Method

Recent Advances in the Chemical Doping of Two-Dimensional Molybdenum Disulfide

Two-Dimensional Doped Materials

Facile Doping in Two-Dimensional Transition-Metal Dichalcogenides by UV Light.

Strong Valence Electrons Dependent and Logical Relations of Elemental Impurities in 2D Binary Semiconductor: a Case of GeP3 Monolayer from Ab Initio Studies.

Ambipolar and N/p-Type Conduction Enhancement of Two-Dimensional Materials by Surface Charge Transfer Doping

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Characteristics and Performance of Layered Two-Dimensional Materials under Doping Engineering

Spatially controlled doping of two-dimensional SnS 2 through intercalation for electronics

Molten‐Salt‐Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS2 and Effectively Altering the Electronic Structure and Phononic Properties

Doping transition metal in PdSeO3 atomic layers by aqueous cation exchange: A new doping protocol for a new 2D photocatalyst