Abstract:Vertically and neatly arranged crystalline graphitic C3N4 (g-C3N4) nanocone arrays were firstly synthesized on nickel-covered silicon (100) substrates supported on a graphite frame. Synthesis was accomplished using an abnormal glow discharge plasma sputtering reaction deposition method with a feed gas mixture of CH4, N2 and H2. The experimental results show that the morphologies, structures, composition and photoluminescence of the grown nanostructures strongly depend on the CH4/(N2+H2) ratios (0–1/10). The hexagonal g-C3N4 nanocone arrays were well grown at a CH4/(N2+H2) ratio of around 1/150 as a result of the hydrogen ion sputtering of the graphite frame to generate a lot of carbon atoms, the hydrogen ion etching on the growing graphite structures, and the reaction between the active nitrogen atoms and the sputtered carbon atoms. The g-C3N4 nanocone arrays have the characteristic photoluminescence-peak of g-C3N4 and very nice wettability to the polymer absorber layers. At the higher or lower CH4/(N2+H2) ratios, the silicon or diamond nanocone arrays were grown respectively due to the ion-sputtering of the silicon substrate and the inhibition of CHn-radicals on the H+-sputtering of the graphite frame or the mismatch between the sputtered carbon atoms and the dissociated nitrogen atoms.

Effects of Experimental Conditions on the Growth of G-C3n4 Nanocones by Plasma Sputtering Reaction Deposition

Controlled growth of crystalline g-C 3 N 4 nanocone arrays by plasma sputtering reaction deposition

Structure Transition Mechanism Of Single-Crystalline Silicon, G-C3n4, And Diamond Nanocone Arrays Synthesized By Plasma Sputtering Reaction Deposition

Effects of Experimental Conditions on the Growth of Vertically Aligned Carbon Nitride Nanocone Arrays

Growth of Single-Crystalline Silicon Nanocone Arrays by Plasma Sputtering Reaction Deposition

Effects of the Experimental Conditions on the Growth of Crystalline Nicx Nanorods Via Pulsed Laser Deposition Accompanied by N-2 Annealing

Effect of Crystal Orientation on Self-Assembly Nanocones Formed on Tungsten Surface Induced by Helium Ion Irradiation and Annealing

The growth of 2D crystalline g-C3N4 films and the control of optoelectronic properties

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Understanding growth of carbon nanowalls at atmospheric pressure using normal glow discharge plasma-enhanced chemical vapor deposition

Synthesis and characterization of single-crystalline graphitic C3N4 nanocones

Modulation Effects of Hydrogen on Structure and Photoluminescence of GaN Nanowires Prepared by Plasma-Enhanced Chemical Vapor Deposition

Construction of Graphitic Carbon Nitride/rutile-Tio2 Core-Shell Nanocone Arrays by Pulsed Laser Deposition and Plasma Sputtering Reaction Deposition

Synthesis of Crystalline Carbon Nitride Nanocone Arrays by Direct‐Current Discharge Plasma‐Assisted CVD

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Low Reflectance Gaas Nano-Cones Fabricated By Colloidal Lithography For Solar Cells

Self-Assembled Fabrication and Characterization of Vertically Aligned Binary CN Nanocone Arrays

Electrical and Optical Properties of Binary CNx Nanocone Arrays Synthesized by Plasma-Assisted Reaction Deposition.

Effects of Experimental Conditions on the Morphologies, Structures and Growth Modes of Pulsed Laser-Deposited CdS Nanoneedles.

Bandgap modulations and promoted carrier separation in crystalline g-C3N4 thin films via chemical vapor deposition

Synthesis of Plasmonic Z-Scheme G-C3n4/w18o49 Nanocone Arrays with Enhanced Charge Separation