Abstract:As tellurides and selenides of Bismuth are extensively used thermoelectric materials in the low-temperature range with refrigeration application, A concerted effort is put forth to boost the ZT by co-doping the pristine Bi 2 Se 3 with antimony (Sb) on cation end and tellurium (Te) on anion side of the compound. The double sintered solid-state reaction method is employed in the preparation of Bi 2 Se 3 and (Bi 1− x Sb x ) 2 Se 2.7 Te 0.3 polycrystalline pellets, with x = 0.02, 0.04, and 0.06. The sample exhibits a rhombohedral structure with the space group of R m. FESEM and EDAX analysis are used to confirm surface morphology and elemental composition of the produced samples. The thermoelectric measurements for the pristine and co-doped samples were conducted by the physical property measurement system as well as a considerable increase in the Seebeck coefficient of − 115 μV/K is observed for 0.02 doping of the Sb which is 4.2 times greater than as for pristine (S = − 28 μV/K). Higher concentration doping ( x = 0.04, 0.06) has not reflected any Seebeck coefficient advancement. In contrast, the lowest total thermal conductivity at a low-temperature regime (< 50 K) is observed for x = 0.06 doping concentration which at near room temperature increases beyond the pristine thermal conductivity; whereas, x = 0.02, 0.04 doping concentration shows a decrement in total thermal conductivity at low, at room temperature region the values are almost equivalent to that of pristine. The co-doped samples' electrical resistivity is substantially less than pristine sample. The highest power factor of 3 × 10 –4 μW/mK 2 is obtained for the x = 0.02 sample. The highest ZT value for the x = 0.02 sample is almost 28 times more than a pristine sample. We conducted a study where we combined experimental and DFT methods to investigate thermoelectric properties incorporated into pristine and doped with antimony and tellurium on Bi 2 Se 3 . We have employed this combination to investigate the partial density of states, Seebeck coefficient, power factor using the Boltzmann transport equation. Theoretical thermoelectric data were derived and compared to experimental observations. Hence, using combined experimental and theoretical investigations helps to predict with higher accuracy of thermoelectric properties of semiconducting materials.

Preparation and Thermoelectric Transport Properties of BiSe and Sb-doped BiSe Single Crystals

Promoted thermoelectric performance of (Ag, Na) co-doped polycrystalline BiSe by optimizing the thermal and electrical transports simultaneously

Thermoelectric Properties of (Ag2se)1-X(bi2se3)x

High performance and low thermal conductivity in Bi<sub>2</sub>Se<sub>3</sub> induced by the synergistic regulation of a resonant energy level and microstructure prepared by Se slow-release method

Rational triple optimizations boost near-room-temperature thermoelectric performance of BiSe

Crystal structure and thermoelectric properties of bulk polycrystalline (SbxBi1-x)2Se3 alloys

Crystal growth and thermoelectric properties of Sn-doped Bi2Se3

Intrinsically Low Thermal Conductivity In Bisbse3: A Promising Thermoelectric Material With Multiple Conduction Bands

A comprehensive experimental and DFT analysis on thermoelectric properties of Sb, Te co-doped Bi2Se3 polycrystals

Thermoelectric Properties of Bi2O2Se Single Crystals

Effects of Sb-doping on the Electron-Phonon Transport Properties of Bi2O2Se

Enhancing thermoelectric performance of BiSbSe3 through improving carrier mobility via percolating carrier transports

Synthesis and Thermoelectric Properties of Bi-doped SnSe Thin Films

Bi8Se7: Delocalized Interlayer π-Bond Interactions Enhancing Carrier Mobility and Thermoelectric Performance near Room Temperature

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb2Te4 Single Crystals

Isovalent co-alloying contributes to considerable improvement in thermoelectric performance of BiSe bulks with weak anisotropy

Structural features and thermoelectric performance of Sb- and Bi-doped Cu2SnSe3 compounds

Tuning band structure and texture for improved thermoelectric performance in BiSe

Carrier Concentration Optimization for Thermoelectric Performance Enhancement in N-Type Bi2O2Se

Optimizing thermoelectric properties of BiSe through Cu additive enhanced effective mass and phonon scattering

High Thermoelectric Performance in Rhombohedral GeSe-LiBiTe2