Abstract:In recent years, the emergence of numerous applications of artificial intelligence (AI) has sparked a new technological revolution. These applications include facial recognition, autonomous driving, intelligent robotics, and image restoration. However, the data processing and storage procedures in the conventional von Neumann architecture are discrete, which leads to the "memory wall" problem. As a result, such architecture is incompatible with AI requirements for efficient and sustainable processing. Exploring new computing architectures and material bases is therefore imperative. Inspired by neurobiological systems, in-memory and in-sensor computing techniques provide a new means of overcoming the limitations inherent in the von Neumann architecture. The basis of neural morphological computation is a crossbar array of high-density, high-efficiency non-volatile memory devices. Among the numerous candidate memory devices, ferroelectric memory devices with non-volatile polarization states, low power consumption and strong endurance are expected to be ideal candidates for neuromorphic computing. Further research on the complementary metal-oxide-semiconductor (CMOS) compatibility for these devices is underway and has yielded favorable results. Herein, we first introduce the development of ferroelectric materials as well as their mechanisms of polarization reversal and detail the applications of ferroelectric synaptic devices in artificial neural networks. Subsequently, we introduce the latest developments in ferroelectrics-based in-memory and in-sensor computing. Finally, we review recent works on hafnium-based ferroelectric memory devices with CMOS process compatibility and give a perspective for future developments.

Multioperation Mode Ferroelectric Channel Devices for Memory and Computation

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

CSA-CiM: Enhancing Multi-Functional Computing-in-Memory with Configurable Sense Amplifiers

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Multimodal 2D Ferroelectric Transistor with Integrated Perception-and-Computing-in-Memory Functions for Reservoir Computing

Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

Ferroelectric materials for neuroinspired computing applications

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

A 2d Heterostructure‐Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

An Organic Multilevel Non-Volatile Memory Device Based on Multiple Independent Switching Modes

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In-Memory Boolean Logic

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

Reconfigurable 3D Stacked Oxide Semiconductor Devices for Hybrid In-Memory Computing

Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing Using Multistate Domain Wall Spin–Orbit Torque Device

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes