Abstract:We investigate the physical origins of endurance fatigue in silicon channel-based ferroelectric field-effect transistor (Si FeFETs) with TiN/Hf $_{{\text{0.5}}}$ Zr $_{{\text{0.5}}}$ O $_{{\text{2}}}$ / SiO $_{{\textit{x}}}$ /Si gate-stacks. Our study employs electrical characterization techniques, including gate leakage current measurements, as well as physical characterization methods containing scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). We identify the presence of a TiO $_{{\textit{x}}}$ N $_{{\textit{y}}}$ interlayer at the TiN/Hf $_{{\text{0.5}}}$ Zr $_{{\text{0.5}}}$ O $_{{\text{2}}}$ interface and a Hf $_{{\textit{x}}}$ Zr $_{{\textit{y}}}$ Si $_{{\textit{z}}}$ O $_{{\text{2}}}$ interlayer at the Hf $_{{\text{0.5}}}$ Zr $_{{\text{0.5}}}$ O $_{{\text{2}}}$ /SiO $_{{\textit{x}}}$ interface. The thicknesses of the TiO $_{{\textit{x}}}$ N $_{{\textit{y}}}$ , Hf $_{{\text{0.5}}}$ Zr $_{{\text{0.5}}}$ O $_{{\text{2}}}$ , and SiO $_{{\textit{x}}}$ layers remain constant during cycling, while the thickness of the Hf $_{{\textit{x}}}$ Zr $_{{\textit{y}}}$ Si $_{{\textit{z}}}$ O $_{{\text{2}}}$ layer increases with endurance cycling. Furthermore, we observe that oxygen vacancy generation occurs throughout the entire gate-stack during endurance, specifically in the Hf $_{{\text{0.5}}}$ Zr $_{{\text{0.5}}}$ O $_{{\text{2}}}$ , Hf $_{{\textit{x}}}$ Zr $_{{\textit{y}}}$ Si $_{{\textit{z}}}$ O $_{{\text{2}}}$ , and SiO $_{{\textit{x}}}$ layers. This finding is also corroborated by the electrical characterization of gate leakage measurements. These oxygen vacancies contribute to the degradation of endurance in Si FeFETs with TiN/Hf $_{{\text{0.5}}}$ Zr $_{{\text{0.5}}}$ O $_{{\text{2}}}$ /SiO $_{{\textit{x}}}$ /Si gate-stacks.

Impact of Mobility Degradation on Endurance Fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure

Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

Impact of Interlayer and Ferroelectric Materials on Charge Trapping During Endurance Fatigue of FeFET With TiN/Hf x Zr 1- x O 2 /Interlayer/Si (MFIS) Gate Structure

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO 2 /Si (MFIS) Gate Structure

Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

Evidence of Oxygen Vacancy Generation As Physical Origin of Endurance Fatigue of Si FeFET with TiN/Hf $_{\text{0.5}}$ Zr $_{\text{0.5}}$ O $_{\text{2}}$ /sio $_{\textit{x}}$ /si Gate-Stacks

Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure

Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ $\textit{V}_{\text{th}}$ Measurement

Impact of Interface Trap Density on the Endurance of HFO<inf>2</inf>/SI FEFETS

Ferroelectric and Interlayer Co-optimization with In-depth Analysis for High Endurance FeFET

Endurance Improvement of HfO $_{\text{2}}$ -Based FeFETs on FDSOI Platform by Al $_{\text{2}}$ O $_{\text{3}}$ Insertion Layer and Leakage-Awareness Recover (LAR) Strategies

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO X at Hf0.5Zr0.5O2/SiO X Interface to Suppress Oxygen Vacancy Generation

In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor

Endurance Improvement of Si FeFET by a Fully CMOS-Compatible Process: Insertion of HfO x at Hf 0.5 Zr 0.5 O 2 /SiO x Interface to Suppress Oxygen Vacancy Generation

Effect of Top Al2O3 Interlayer Thickness on Memory Window and Reliability of FeFETs With TiN/Al2O3/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure

Evaulation the Degradation in Nmosfets with HfO2 Gate Dielectric and Interfacial Layer by 3D Kinetic Monte-Carlo Method

Impact of the Top SiO2 Interlayer Thickness on Memory Window of Si Channel FeFET with TiN/SiO2/Hf0.5Zr0.5O2/SiOx/Si (MIFIS) Gate Structure