Abstract:Beta-gallium oxide (β-Ga2O3) is emerging as a promising ultrawide band gap (UWBG) semiconductor, which is vital for high-power, high-frequency electronics and deep-UV optoelectronics. It is especially significant for flexible wearable electronics, enabling the fabrication of high-performance Ga2O3-based devices at low temperatures. However, the limited crystallinity and pronounced structural defects arising from the low-temperature deposition of Ga2O3 films significantly restrict the heterojunction interface quality and the relevant electrical performance of Ga2O3-based devices. In this work, cuprous oxide (Cu2O)/Zr-doped β-Ga2O3 heterojunction diodes are fabricated by magnetron sputtering without intentional substrate heating, followed by an investigation into their microstructure and electrical behaviors. Zr doping can markedly enhance the Ga2O3 crystallinity at low substrate temperatures, transforming the amorphous structure of pristine Ga2O3 films into the crystallized β phase. Moreover, crystalline β-Ga2O3 facilitates the epitaxial growth of the Cu2O phase, suppressing the formation of detrimental secondary phase CuO at the heterojunction interface. Benefiting from the high-quality heterojunction interface, the Cu2O/Zr-doped β-Ga2O3 heterojunction diode exhibits a near-ideal electrical behavior with a low ideality factor of 1.6. The consistent electrical parameters extracted from current-voltage (J-V) and capacitance-voltage (C-V) measurements also confirm the high quality of β-Ga2O3. This work highlights the potential for the low-temperature production of high-quality β-Ga2O3-based heterojunction devices through Zr doping.

Synthesis of N-Type ZrO2 Doped Ε-Ga2o3 Thin Films by PLD and Fabrication of Schottky Diode

Tuning Electronic Properties in Tin-Assisted N-Type Ε-Ga2o3:Zr Thin Films Via PLD for P-N Heterojunction

Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation

doping in pulsed-laser-deposited - for device applications

Gallium Doping Dependence of Single-Crystal N-Type Zno Grown by Metal Organic Chemical Vapor Deposition

Structural and photoluminescence properties of Co-Sputtered p-type Zn-doped β-Ga2O3 thin films on sapphire substrates

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Ge doping of α-Ga2O3 thin films via mist chemical vapor deposition and their application in Schottky barrier diodes

Microstructure Evolution and Electrical Behaviors for High-Performance Cu2O/Zr-Doped β-Ga2O3 Heterojunction Diodes

Fabrication and Properties of P-Type K Doped Zn1−Mg O Thin Film

Structural and Electrical Properties of Single Crystalline Ga-Doped Zno Thin Films Grown by Molecular Beam Epitaxy

Fabrication of Ga2O3 Schottky Barrier Diode and Heterojunction Diode by MOCVD

Fabrication of high-quality ZnCdO epilayers and ZnO/ZnCdO heterojunction on sapphire substrates by pulsed laser deposition

Pt/ZnGa₂O₄ Schottky Barrier Diodes Fabricated by Using Single Crystal N-Znga₂o₄ (111) Substrates

Structure and Dielectric Properties of Ultra-Thin ZrO2 Films for High- K Gate Dielectric Application Prepared by Pulsed Laser Deposition

Fabrication and properties of N-doped top layer of Ga2O3 films by magnetron sputtering

Performances Of Thin Film Transistors With Ga-Doped Zno Source And Drain Electrodes

Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa2O4 Films by Pulsed Laser Deposition

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Achieving High Performance Ga2O3 Diodes by Adjusting Chemical Composition of Tin Oxide Schottky Electrode

Fabrication and Characterization of Zr-Rich Zr-Aluminate Films for High-Kappa Gate Dielectric Applications