Abstract:P-type doping of ultrawide-bandgap semiconductors, which are the key materials for fabrication of next-generation high-performance optoelectronic and electronic devices, is extremely difficult to achieve. The lack of p-type Ga2O3 has become a great obstacle to fabricate a full Ga2O3-based p-n homojunction for high-performance device applications. We demonstrate that N-doped beta-Ga2O3 achieved by a phase transition from GaN to beta-Ga2O3 possesses low formation energy and transition level epsilon(0/-), thereby with good N dopant solubility and low activation energy of N acceptors (0.355 eV). The delocalization effect, enhancement of valence band dispersion, and thus the decrease of the hole effective mass are predicted for N-doped beta-Ga2O3 due to the hybridization of O 2p with N 2p and Ga 4s orbitals. Activated hole concentrations of 6.1 x 10(15) and 2.1 x 10(16) cm(-3) at a valence band maximum are predicted for beta-Ga2O3:N-O(III) obtained by the nonspin and spin-polarized calculations, respectively. The hole mobility is 1.3 cm(2) V-1 s(-1) for undoped beta-Ga2O3 and remarkably increases to 8.8 and 5.5 cm(2) V-1 s(-1) for beta-Ga2O3:N-O(III) obtained by the non-spin and spin-polarized calculations, respectively. The origins for the unusual increase of hole mobility are attributed to the decrease of the hole effective mass, and reduction in acoustic deformation potential scattering and optical phonon scattering due to the weakening of electron-phonon coupling by N-induced phonon stiffening for beta-Ga2O3:N-O(III). The p-type conductivity of N-doped beta-Ga2O3 is demonstrated theoretically and also experimentally with a Hall hole concentration of 3.19 x 10(15) cm(-3) and a Hall hole mobility of 23.1 cm(2) V-1 s(-1) for N-doped beta-Ga2O3 films, and the p-type conductivity mechanisms are clarified. These studies will open a new horizon for other p-type wide bandgap oxide semiconductors.

Fabrication and properties of N-doped top layer of Ga2O3 films by magnetron sputtering

Compositions and properties of high-conductivity nitrogen-doped p-type β-Ga2O3 films prepared by the thermal oxidation of GaN in N2O ambient

Further Characterization of the Polycrystalline p-Type β-Ga2O3 Films Grown through the Thermal Oxidation of GaN at 1000 to 1100 °C in a N2O Atmosphere

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Structural and photoluminescence properties of Co-Sputtered p-type Zn-doped β-Ga2O3 thin films on sapphire substrates

Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga2O3 Film Grown by Plasma-Enhanced Atomic Layer Deposition

Study on the Nitridation of Β-Ga2o3 Films*

Effect of the doped nitrogen on the optical properties of β-Ga2O3 nanowires

Microstructures and Properties of N-Doped TiO_2 Films Grown by Dielectric Barrier Discharge Chemical Vapor Deposition

Properties of Ni doped and Ni–Ga co-doped ZnO thin films prepared by pulsed laser deposition

Synthesis of N-Type ZrO2 Doped Ε-Ga2o3 Thin Films by PLD and Fabrication of Schottky Diode

Gallium Doping Dependence of Single-Crystal N-Type Zno Grown by Metal Organic Chemical Vapor Deposition

Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped -Ga<sub>2</sub>O<sub>3</sub> with high hole mobility

Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga2O3

Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Effective P-type N-doped α-Ga2O3 from First-Principles Calculations

The effects of oxygen co‐doping on structural, magnetic and optical properties of Mn‐doped GaN

Influence of Annealing Atmosphere on the Structure, Morphology and Transmittance of N-Incorporated Ga2o3 Films

Preparation and Characterization of Nitrogen-doped P-type MgxZn1-xO Film

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition