Mn-doped SiGe Thin Films Grown by UHV/CVD with Room-Temperature Ferromagnetism and High Hole Mobility

Shen Limeng,Zhang Xi,Wang Jiaqi,Wang Jianyuan,Li Cheng,Xiang Gang

DOI: https://doi.org/10.1007/s40843-022-2025-x

2022-01-01

Science China Materials

Abstract:In this work, silicon-germanium (SiGe) thin films are epitaxially grown on Ge substrates by ultra-high vacuum chemical vapor deposition and then doped with Mn element by ion-implantation and subsequent rapid thermal annealing (RTA). The characterizations show that the epitaxial SiGe thin films are single-crystalline with uniform tensile strain and then become polycrystalline after the ion implantation and following RTA. The magnetization measurements indicate that the annealed thin films exhibit Mn concentration-dependent ferromagnetism up to 309 K and the X-ray magnetic circular dichroism characterizations reveal the spin and orbital magnetic moments from the substitutional Mn element. To minimize the influence of anomalous Hall effect, magneto-transport measurements at a high magnetic field up to 31 T at 300 K are performed to obtain the hole mobility, which reaches a record-high value of ∼1230 cm2 V−1 s−1, owing to the crystalline quality and tensile strain-induced energy band modulation of the samples. The first demonstration of Mn-doped SiGe thin films with room-temperature ferromagnetism and high carrier mobility may pave the way for practical semiconductor spintronic applications.