Abstract:In this paper, a 2-D simulation of breakdown characteristics of GaN-based Metal Insulator Semiconductor High Electron Mobility Transistors with a high permittivity passivation layer was performed. As a result, it is found that the breakdown voltage is enhanced with permittivity of the passivation layer due to reduction of the electric field at the drain edge of gate. In addition, the GaN-based MIS-HEMTs with three different passivation (Si 3 N 4 passivation, Al 2 O 3 /SiNx stack passivation and ZrO 2 /SiNx stack passivation) were fabricated and compared. The breakdown voltage of the MIS-HEMTs passivated with ZrO 2 /SiNx stack is 483 V, which is 22% higher than for the MIS-HEMTs with Si 3 N 4 passivation. Moreover, the devices passivated with SiNx or bilayer Al 2 O 3 /SiNx show significant current collapse (~33% and ~8%, respectively), while the bilayer ZrO 2 /SiNx passivated devices exhibit negligible current collapse of ~1%.

Atomic-resolved Structural and Electric Field Analysis of the Passivation Interface of MIS-HEMTs

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Investigation of the Interface Between LPCVD-SiNx Gate Dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

Comparative Investigation into the Interface Passivation of Ge N- and P-Mosfets with Various 2D Materials

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Interface charge engineering on an in situ SiN x /AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Normally OFF GaN-on-Si MIS-HEMTs Fabricated with LPCVD-SiN X Passivation and High-Temperature Gate Recess

Investigation of the Trap States and $v_{\text{th}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) Interface Trap State Reduction Via In-Situ N-2/H-2 RF Downstream Plasma Passivation

Investigation of Different Interface Passivation on Germanium: RTO-GeO2 and Nitrogen-Plasma-passivation

Mechanism of Leakage of Ion-Implantation Isolated AlGaN/GaN MIS-high Electron Mobility Transistors on Si Substrate

Compatibility of AlN/SiN<sub>x</sub>Passivation With LPCVD-SiN<sub>x</sub>Gate Dielectric in GaN-Based MIS-HEMT

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

Effects of SiON/III-nitride Interface Properties on Device Performances of GaN-based Power Field-Effect Transistors